Field of the Invention
The invention relates to a semiconductor device, and particularly relates to a transistor structure.
Description of Related Art
The high voltage transistor device (such as lateral diffused metal-oxide semiconductor (LDMOS) etc.) is broadly applied to various integrated circuits (ICs). However, the charge and the electric field is easy to concentrate at the sharp edge or the sharp point of the high voltage transistor device, and thus the leakage current is occurred and the electrical performance is reduced.