One time programmable memory cells and corresponding memory arrays provide non-volatile memory which may be programmed once with desired values to be stored, which values then remain stored also without power being supplied. Sometimes, such one time programmable memories are also referred to as programmable read only memories (“PROM”). Such memories use configurations where elements like fuses or anti-fuses are arranged in an array and accessible by wordlines and bitlines. Fuses or anti-fuses may be irreversibly modified by applying a programming voltage, for example through breakdown of an oxide, thus programming the memory. Reading the memory then generally occurs using lower voltages than the programming voltage.
Such memories are for example used in telecommunication applications, sensor applications, in read-out circuits, e.g. application specific integrated circuits (ASICs) for microelectromechanical systems (MEMS) or in radio frequency switches, but are not limited to these applications. Non-volatile memories may for example be used for storing calibration data from a post-manufacturing calibration or to store software code needed for a particular device.
Increasingly, there is a demand for higher storage densities of such memories, i.e. a higher number of memory cells per area. Furthermore, it is desirable that production of such memories be compatible with standard manufacturing techniques, for example CMOS process compatible. Finally, high reliability of such memories is desired.