1. Technical Field
The disclosure relates in general to a memory device and a manufacturing method thereof, and particularly to a memory device having a reduced size as well as an excellent operating performance and a manufacturing method thereof.
2. Description of the Related Art
Conventionally, in a manufacturing process for forming a memory device, a whole polysilicon film is deposited and then etched to form word lines. Next, dielectric materials are filled into the spaces between the word lines. However, as the reduction of the sizes of memory devices, the widths of word lines and between which the gaps are reduced as well. As such, the word lines may be short-circuited due to the residual polysilicon between the word lines manufactured by etching processes, caused by an incomplete etching between the word lines, or the widths of word lines are not uniform, resulting in lower reliability of the memory devices. In addition, the reduction of widths of word lines results in poor performances of memory devices.
Accordingly, it is desirable to develop memory devices with improved reliability and operating performance.