The present invention relates to: a method of manufacturing a semiconductor device; in particular a technology effectively applicable to a method of manufacturing a semiconductor device formed by connecting a wire with a surface of a pad electrode through a conductive layer.
A technology of adopting a palladium film as a seed metal film and using an etching liquid of an iodine series as the etching liquid is disclosed in Japanese Unexamined Patent Application Publication No. 2010-157683 (Patent Literature 1).