1. Field
Example embodiments relate to methods of forming contact holes.
2. Description of the Related Art
Photolithography has been used for forming a pattern of a semiconductor device. However, it is difficult to form a pattern having a minute pitch below 40 nm due to limits in the resolution. Thus, a double patterning method was developed. However, the double patterning method may have too many steps and/or may be complicated.
Thus, a method of forming a minute pitch pattern, particularly, contact holes using a direct self assembly (DSA) has been developed. However, in the DSA method, a material for the DSA may be arranged in a hexagonal shape for a thermodynamic stability such that it may be difficult to form contact holes having a desired arrangement.