Conventionally, in production of a semiconductor device, microprocessing by lithography using a resist composition has been carried out. The microprocessing is a processing method in which a thin film of a photoresist composition is formed on a semiconductor substrate such as a silicon wafer, irradiated with an active light such as an ultraviolet light through a mask pattern that has a pattern of a device, and developed, and the substrate is etched using the obtained photoresist pattern as a protective film to form fine irregularities corresponding to the pattern on a surface of the substrate. In recent years, an increase in degree of integration of the semiconductor device has advanced, and the wavelength of used active light shortens from an i line (wavelength: 365 nm) and a KrF excimer laser (wavelength: 248 nm) to an ArF excimer laser (wavelength: 193 nm). For this reason, diffuse reflection of active light on the semiconductor substrate and influences of standing wave are severe problems. In order to solve the problems, a method for providing an anti-reflective coating (Bottom Anti-Reflective Coating: BARC) between the resist and the semiconductor substrate has been widely investigated. The anti-reflective coating is also referred to as resist underlayer film. As the anti-reflective coating, an organic anti-reflective coating formed from a polymer having a light absorbing moiety and the like has been often investigated from the viewpoint of ease of use thereof.
Patent Documents 1 to 3 disclose a resist underlayer film (anti-reflective coating) in which no intermixing with a photoresist film formed thereon is caused, a desired optical parameter (k value and n value) is obtained during exposure using an ArF excimer laser, and a desired dry etching rate is obtained.
On the other hand, in lithography using EUV (abbreviation of extreme ultraviolet light, wavelength: 13.5 nm) exposure that is a further microprocessing technology, reflection on a substrate does not occur, but roughness of side wall of a resist pattern due to miniaturization of a pattern becomes a problem. Therefore, a resist underlayer film for forming a resist pattern profile having high rectangularity has been often investigated. As a material for forming a resist underlayer film for exposure to a high-energy beam such as EUV, an X ray, and an electron beam, a resist underlayer film-forming composition in which generation of outgas is reduced has been disclosed. (see Patent Document 4).