The present invention relates to a dynamic type RAM (random access memory) and, more particularly, to a technique which may be effectively utilized for a semiconductor integrated circuit device having a dynamic type RAM formed using one-element type dynamic memory cells each consisting of a data storing capacitor and an address selecting MOSFET.
As a result of the increase in the storage capacity of dynamic type RAMs, the chip size of the semiconductor substrate has become larger, and the distributed resistance of word lines which are formed from a polycrystalline silicon or the like has become a serious problem. As one of the solutions to this problem, the Al shunt method is known in which word lines are divided into appropriate lengths to define divided word lines which are coupled to word lines which are formed from an aluminum layer having a relatively large conductivity. The Al shunt method is described, for example, in "Digest of Technical Papers" of ISSCC, SESSION-XVI, February 1983, pp. 226-227.