This invention relates to a high-resolution, cryogenic, side-entry type specimen stage for a high-voltage electron microscope in which in-situ four point D.C. electrical resistivity measurements and electron optical observation can be made.
Studies of the effect of irradiation on metals are of great importance today. For example, extensive work is being done on electron damage studies of metals which might be useful in fusion reactors. For this purpose optical studies using electron microscopes are of importance. Likewise, resistivity studies are of great importance because defect damage increases the electrical resistivity which can be detected before the defects become pronounced enough to see visually. While both types of studies have been made in the past, no instruments are available within which electron optical studies and electrical resistivity measurements can be made simultaneously at cryogenic temperatures. The electrical resistivity measurements would complement the electron optical observation in the high-voltage electron microscope to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentration. The specimen stage described herein is designed to achieve the same electron optical resolution (.about.5 A) below 10 K as can be obtained at room temperature.