1. Field of the Invention
The present invention relates to a thin-film patterning method for a magnetoresistive device.
2. Related Background Art
Conventional thin-film patterning methods for thin-film magnetic heads and the like having magnetoresistive devices, for example, are described in Japanese Patent Application Laid-Open Nos. 2002-175606, 2003-17353, 2003-512941, 2000-76618, 2001-110663, and 5-342527, for example. These methods can perform thin-film patterning of thin-film magnetic heads and the like.