Wide-bandgap semiconductor devices are based on a semiconductor material with a bandgap of at least 2 eV or at least 3 eV and exhibit lower on-state resistance at high temperatures, lower switching losses and lower leakage currents compared to conventional silicon-based semiconductor devices. Semiconductor devices from wide-bandgap material may include asymmetric transistor cells with stripe-shaped trench gate electrodes that control transistor channels in only one of two opposite longitudinal mesa sidewalls of mesa portions formed from the semiconductor material between neighboring trench gate structures.
It is desirable to improve device characteristics of wide-bandgap semiconductor devices including asymmetric transistor cells with trench gates and to further expand the range of applications for such devices.