FIG. 1 is a drawing illustrating a semiconductor device in the form of a “system in a package” (SiP) obtained through a related art semiconductor manufacturing method.
Referring to FIG. 1, a related art SiP semiconductor device may include interposer 11, first device 13, second device 15, and third device 17.
First device 13, second device 15, or third device 17 may include any one of a central processing unit (CPU), a static random access memory (SRAM), a dynamic random access memory (DRAM), a flash memory, a logic large scale integrated circuit (LSI), a power integrated circuit (IC), a control integrated circuit (IC), an analog large scale integrated circuit (LSI), a microwave monolithic integrated circuit (MM IC), a complementary metal-oxide semiconductor radio-frequency integrated circuit (CMOS RF-IC), a sensor chip, a micro-electro-mechanical systems (MEMS) chip, etc.
Connection units may be formed between first and second devices 13 and 15, and between second and third devices 15 and 17, and may transfer signals to each device.
However, to extensively use the SiP semiconductor device having the above structure, a problem regarding heat dissipation may need to be solved. Particularly, the problem regarding heat dissipation of a device, such as second device 15 positioned in a mid-layer, may need to be solved to extensively use the SiP semiconductor device.