When a semiconductor device is fabricated, a semiconductor die is typically wire bonded to a metal lead frame. In a conventional wire bonding assembly, a plurality of connected lead frames, each having a semiconductor die attached thereto, is inserted along a track. Each lead frame is passed under a hold down clamp which maintains the lead frame within a window which is cut through the clamp. After the lead frame is clamped, the semiconductor die is wire bonded to the lead frame. Typically, gold wire is used and the lead frame is a metal such as a nickel-iron alloy or copper. Due to a variety of factors, such as the presence of impurities on bonding pads, some wires do not stick to the bonding pads. In order to further enhance the strength of the wire bond, the semiconductor die is typically heated from below the lead frame. A disadvantage with heating the semiconductor die from beneath the lead frame is that the die is generally too thick for enough heat to reach the bonding surface to improve the strength of the wire bond. When inadequate heat occurs, more wire bonding failures occur. In conventional die bonding assemblies, others have used hot gas chambers. However, gas chamber heating is inefficient and difficult to control when used with high speed bonding and ceramic capillary gas tubes.