As a semiconductor memory device for storing a data which is excellent in a portability, there has been widely used a flash memory corresponding to a nonvolatile memory. A cost per bit of the flash memory has rapidly come down year by year, and a falling degree is sharper than a falling degree which is expected only by reduction of memory cell size. This has been achieved by reducing an area per bit on the basis of an artifice of an element structure or an introduction of a multilevel storage. In the semiconductor memory device, an area of a memory cell is reflected on a chip area, thereby being reflected on a manufacturing cost of the semiconductor memory device. A rough standard of the cost can be grasped by calculating how many times F2 a unit memory cell can be constructed, in which reference symbol F denotes a patterning dimension. At the present day, NAND type flash memory and AG-AND type flash memory can achieve a cell size which is approximately equal to a memory cell size corresponding to an ideally small 4F2. To make a memory cell smaller, it is necessary to line up the structure at a pitch smaller than 2F corresponding to twice of the lithography dimension F. To realize this, there can be considered such an artifice as to form a half pitch structure by utilizing a side wall of the once formed structure. As an example of the technique mentioned above, there can be listed up Japanese Patent Application Laid-Open Publication No. 08-055908 (Patent Document 1). And, there can be considered a technique of relaxing a pitch of a local data line (a local bit line) so as to connect to a global data line (a global bit line), however, in the case of relaxing the pitch of the local data line so as to connect to the global data line (the global bit line), it is necessary to set a select transistor to multi stages. As an example of a method of achieving a multi-stage select transistor with a small area penalty, there can be listed up Japanese Patent Application Laid-Open Publication No. 2004-31448 (Patent Document 2).