In general, in a method for growing a silicon single crystal according to the Czochralski method, a raw material (polycrystalline silicon) is loaded inside a quartz crucible, polycrystalline silicon is melted by heat radiated from a heater to form a silicon melt, and then a silicon single crystal is grown from a surface of the silicon melt.
A silicon wafer used as a substrate for a semiconductor device is added with a P-type dopant or an N-type dopant in the silicon single crystal growth process so as to have an appropriate resistivity value. In addition, the P-type dopant or the N-type dopant is further classified into a high-melting-point dopant whose melting point is higher than that of silicon and a low-melting-point dopant whose melting point is lower than that of silicon, and a method of adding a dopant to a silicon melt varies depending on a type of a dopant.
A maximum resistivity value of an ingot, which may be realized with impurities included in a raw material (polysilicon, quartz crucible) currently used, is about 5 kΩ on the basis of the P-type. It is necessary to control a level of donor and acceptor included in a raw material in order to secure a resistivity of 8 kΩ or more.
In the related art, since impurities included in a raw material may not be accurately checked, a single crystal ingot was grown without introducing a dopant, and a part of a grown initial body was processed into a sample to measure a resistivity. In the case of this, since a procedure for calculating and inputting a necessary amount of dopant so as to have a target resistivity value is required and a growing time of a single crystal body for manufacturing a sample, an evaluation time of a sample, and doping time are added, there are problems that a process loss time is generated and the productivity of single crystal growth is also deteriorated.