1. Field of the Invention
This invention relates to a process for operating a charge coupled arrangement in a two-phase operation, in which an insulating layer is provided on a substrate of semiconductor material and contains electrodes at a first level spaced apart therein and insulated from the semiconductor substrate, and second electrodes at a second level arranged above the interspaces between the electrodes of the first level and electrically insulated from the electrodes of the first level, and wherein each electrode of the second level is electrically connected to and adjacent electrode of the first level and a zone, doped opposite to that of the semiconductor substrate, is provided in the substrate beneath the electrodes and beneath the insulating layer.
2. Description of the Prior Art
Charge-coupled arrangements are well known in the art. For example, the publication "The new concept for memory and imaging: charge coupling" by Laurence Altman, appearing in the June 21, 1971 issue of the periodical Electronics at Pages 50 to 58, describes a SCCD charge-coupled arrangement (surface charge-coupled device) for two-phase operation in an aluminum-silicon-gate technique. In order to change the transmission direction, it is necessary to change the pulse program for the pulse train lines. However, this means that in each case each second aluminum electrode and each second silicon electrode must be connected to an individual drive electrode and that these four lines must be accessible from the exterior of the device. In the event that adjacent aluminum and silicon electrodes are permanently connected, it is not possible, however, to change direction in this manner.
The "Bell System Technical Journal", Vol. 54, September 1972, No. 7, Pages 1635-1640 describes a BCCD (buried channel charge-coupled device) arrangement. In such an arrangement, below the electrodes between the semiconductor substrate and the insulating layer is arranged a zone which is oppositely doped in respect of the doping of the substrate.