The invention relates to an integrated circuit comprising at least one level of metallization, the level of metallization being provided with tracks and comprising metal portions of at least two different thicknesses.
A level of metallization usually comprises metal tracks of small thickness, for example 1 micron, and small width, for example 1 micron. These metal tracks are used to transfer logic data. To manufacture inductors with an inductance of several nanohenrys, a separate level of metallization may be provided which is employed only for this purpose. In order to reduce the resistance of these inductors, particularly the direct-current resistance, use is made of inductors having a large width of, for example, 20 .mu.m, and a large thickness of, for example, 2.5 .mu.m.
However, it is rather unsatisfactory to use a level of metallization only for inductors as a large area of this level of metallization remains unused. For this reason it would be desirable to take measures enabling said level of metallization to also comprise tracks for the transfer of logic data, said tracks having a small width. However, it is very difficult to manufacture tracks which are narrow and thick.