Sputter targets are used in physical vapor deposition (PVD) techniques in order to provide thin films on complex integrated circuits. In these processes, it is important that the sputter target provide film uniformity and minimal particle generation. Electrical resistivity of the coated thin film must also be acceptable.
In many prior art techniques for making sputter targets, target densities are low with concomitant increased porosity serving as a possible contaminant site. In order to obtain suitable high density and low porosity, high temperature manufacturing processes are employed that, in turn, sometimes lead to undesirable grain growth in the target.
Often high oxygen content targets result from the conventional processes. Films coated by such targets exhibit undesirable electric resistivity. Thus, many of the prior art sputter target manufacturing methods result in unacceptable target and resulting film characteristics such as contamination, low density, and undesirable electrical properties.