As an example of processes of manufacturing a semiconductor device, a process of forming a film such as a nitride film, an oxide film or the like on a substrate is often carried out by supplying, e.g., a precursor containing silicon and a reactant such as a nitriding gas, an oxidizing gas or the like to the substrate.
In some cases, depending on the kinds of precursors, when performing the aforementioned film forming process, it may be difficult to improve a deposition rate, and then the productivity of a film forming process deteriorates.