The present application relates to a semiconductor structure and a method of forming the same. More particularly, the present application relates to a semiconductor structure including a thermally stable buried metal-insulator-metal (MIM) capacitor with landing pads that is formed on a bulk semiconductor substrate.
A capacitor is a passive two-terminal electrical component that stores electrical energy in an electric field. A capacitor is a component designed to add capacitance to a circuit. Capacitors are widely used in electronic circuits for blocking direct current while allowing alternating current to pass.
Metal-insulator-metal (MIM) capacitors are one type of capacitor design that is valuable in many applications. For example, MIM capacitors can be used in radio frequency (RF) circuits, in various configurations in analog integrated circuits (ICs), and for decoupling capacitance in high power microprocessor units (MPUs). MIM capacitors are useful in dynamic access random memory (DRAM) cells. As such, there is a need for providing MIM capacitors that are thermally stable and which can have a tailored capacitance.
Furthermore, and in conventional MIM capacitors, the metal layers of the capacitor are very thin and hard to contact. Hence, there is also a need for providing MIM capacitors in which larger bulk areas are provided for contacting.