The present invention relates to a semiconductor device and a method of manufacturing the same and relates to, for example, a semiconductor device manufacturing method executing a burn-in test and a semiconductor device.
In a burn-in test process of a semiconductor device, a semiconductor device is attached to each of a plurality of IC sockets (hereinlater, also simply called sockets) provided for a burn-in board, and a burn-in test is performed.
For example, in a semiconductor device of a BGA (Ball Grid Array) type, since an external terminal is a ball electrode, a socket of a sandwich type for a BGA, which achieves electric conductivity by sandwiching a ball electrode by contact pins is known. By using the socket of the sandwich type for a BGA, a burn-in test is performed.
The structure of a socket for a semiconductor package is disclosed in, for example, Japanese Unexamined Patent Application Publication No. 2000-315555 (patent literature 1).
The structure of a contact/socket for a BGA/IC test is disclosed in, for example, Japanese Unexamined Patent Application Publication No. Hei 9(1997)-219267 (patent literature 2).