Discussions regarding specific properties of graphene have been reported. For instance, U.S. Pat. No. 8,461,028, issued Jun. 11, 2013 and entitled “Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantation”, discusses the following: “A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.” Abstract.
U.S. Pat. No. 8,414,799, issued Apr. 9, 2013 and entitled “Method for Manufacturing Graphene”, discusses the following: “A method for manufacturing graphene is disclosed, which comprises the following steps: putting graphite material and an organic solvent, a surfactant, or a combination thereof in a reaction tank and introducing a supercritical fluid in the reaction tank to allow the organic solvent, the surfactant, or the combination thereof to dissolve in the supercritical fluid and to permeate into the graphite material; and removing the supercritical fluid by depressurization to form graphene. The method of the present invention has simple steps and reduced consumption of manufacturing time, and also can promote the quality of the resultant graphene in large-scale manufacturing.” Abstract.
U.S. Pat. No. 8,361,813, issued Jan. 29, 2013 and entitled “Method for Generating Graphene Structures”, discusses the following: “A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.” Abstract.
Despite the reported discussions, there is still a need in the art for new internally functionalized graphene substrates, methods of making such substrates and methods of using such substrates.