It has been discovered that films of hydrogenated amorphous silicon can be doped and used to form various types of semiconductor devices. U.S. Pat. No. 4,064,521 to David E. Carlson, issued Dec. 20, 1977 entitled "Semiconductor Device Having Body of Amorphous Silicon" which is incorporated herein by reference, discloses a method of forming hydrogenated amorphous silicon and various semiconductor devices which can be made with this material. However, it has been found difficult to form acceptor-doped hydrogenated amorphous silicon which has a wide band gap, i.e. contains a large amount of hydrogen, and is conductive. To deposit conductive P-type hydrogenated amorphous silicon it has been found necessary to deposit the material at relatively high temperatures, above 300.degree. C. However, the higher the deposition temperature the lower the amount of hydrogen that becomes incorporated in the amorphous silicon so that at these relatively high deposition temperatures, the amount of incorporated hydrogen is relatively low.