1. Field of the Invention
The present invention relates to a composite material which includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube, and more particularly, to a method of forming a semiconductor device including forming a channel region which includes a carbon nanotube-pentacene composite layer.
2. Description of the Related Art
Organic semiconductors have been studied extensively for use as channel materials in thin film transistors. In particular, solution processed pentacene thin film transistors (TFT) have been formed using soluble pentacene precursors which after deposition on the surface could be converted to pentacene by moderate heating. For example, see U.S. Pat. No. 6,963,080 to Afzali-Ardakani et al. entitled “THIN FILM TRANSISTORS USING SOLUTION PROCESSED PENTACENE PRECURSOR AS ORGANIC SEMICONDUCTOR”, and U.S. Pat. No. 7,125,989 to Afzali-Ardakani et al. entitled “HETERO DIELS-ALDER ADDUCTS OF PENTACENE AS SOLUBLE PRECURSORS OF PENTACENE”, which are commonly assigned with the present application and incorporated by reference herein.
However, the charge carrier mobility of these organic thin film transistors (OFET) are limited and usually in the range of 10−2 cm2/V·sec to 10−1 cm2/V·sec.
On the other hand, carbon nanotubes have been demonstrated to have charge carrier mobility far superior to that of single crystal silicon but are very difficult to fabricate integrated circuits.