This invention relates to acceptor atom introduction that is performed in fabricating SiC semiconductor devices. More particularly, the invention performs ion implantation of C atoms in addition to acceptor atoms, thereby forming p-type SiC of better quality in local areas and contributing to the fabrication of SiC integrated circuits.
As is well known, p-type conduction characteristics are attained by ion implantation of Al, B and other acceptor impurities into SiC. Problems with this conventional approach are that the introduced acceptor atoms are poorly activated electrically and that they tend to diffuse outwardly as the result of a heat treatment conducted after the ion implantation. No technology has not yet been established in forming p-type SiC of better quality that is suitable for device fabrication.