The present invention is related to a semiconductor device, a method for manufacturing the semiconductor device, and an electronic device that includes the semiconductor device.
An electronic device, such as a wireless communication device (e.g., a mobile phone or a tablet computer), may include a radio-frequency (RF) front-end module (FEM). An RF FEM may include an RF switch device, which may include an integrated circuit or may be part of an integrated circuit. Presently, an RF switch device may include a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET).
In an RF switch device that includes a SOI MOSFET, parasitic coupling effects may exist between some of a source electrode (or source), a drain electrode (or drain), a gate electrode (or gate), an interconnection line, and a semiconductor substrate, such that parasitic capacitance may be generated. The parasitic capacitance may vary according to voltage variation of switch signals. As a result, the performance of the SOI MOSFET, the RF switch, the RF FEM, and/or the electronic device may be undesirably affected.