1. Technical Field
The disclosure relates in general to a semiconductor element and a manufacturing method thereof, and more particularly to a metal oxide semiconductor field effect transistor and a manufacturing method thereof.
2. Description of the Related Art
With the development of semiconductor technology, varied semiconductor elements are provided. For example, a metal oxide semiconductor field effect transistor can be used in an analog circuit or a digital circuit.
In the metal oxide semiconductor field effect transistor, a base electrode and a source electrode may not directly connected and my result a body effect. According to the body effect, a gate voltage of the metal oxide semiconductor field effect transistor will be changed and affects the electric performance thereof.