1. Field
Embodiments relate to a semiconductor memory device including a cylinder-type capacitor lower electrode and associated methods.
2. Description of the Related Art
In semiconductor memory devices including a cylinder-type capacitor lower electrode, e.g., dynamic random access memories (DRAMs), a design rule may be reduced. Thus, a height of the capacitor lower electrode may gradually increase in order to secure a sufficient cell capacitance within the limited area of the semiconductor memory device. Accordingly, it may be advantageous to provide semiconductor memory devices having a structure that may efficiently prevent undesirable leaning of the capacitor lower electrode.