The conventional process for manufacturing a light emitting diode (LED) generally consists of three main steps including material epitaxy, chip technology and chip package. The basic function of semiconductor device package is to connect a chip electrode of a microsize chip to a relative big electrode structure so as to obtain facility for usage.
The packaging process for manufacturing a light emitting diode generally involves using a type of substrate or package or lead frame, bonding the light emitting diode chip on the substrate or package or lead frame in one way, and then connecting an electrode on the upper portion of the chip to a corresponding electrode of the substrate or package or lead frame by a ball bonding, so as to achieve electrical connection. Finally, a transparent package material is applied to the substrate or package or lead frame to finish an encapsulation or coverage in certain way, in which the transparent material is sometime formed to a certain shape in the macroscopic level to improve light extraction efficiency. Alternatively, a corresponding fluorescent material may be used for packaging or covering the chip, to achieve a certain application. As for this aspect, various package types and special functions thereof are respectively described in patents NO. US2010267174A1, US2005151142A1, CN201081157Y, CN201074776Y, US2008089064A1, CN201074776Y, CN101222012A, CN101409266A, CN10137137B, CN101060116B and EP2270889A2. As the development of the semiconductor technology, the proportion of material epitaxy and chip technology in cost to all the manufacture process of the light emitting diode decreases while the expense of package step is hard to be minished due to material expense, relative more steps and lower technological level. Therefore, it tends to develop integration and miniaturization of light emitting diode device. Currently, some wafer level packaging methods of light emitting diode device are disclosed to use a type of wafer (e.g., silicon wafer, ceramic plate, etc.) for substrate supporting the light emitting diode, such as, a packaging pattern of light emitting diode on an AlN substrate, originated from VisEra Technoloty. A type of chip scale packaging of light emitting diode (e.g., ZL200610108560.4 filed by Advanced Semiconductor Engineering Incorporated, and US20100163907A1 filed by China's Taiwan crystal aureole electric Co. LTD) is also disclosed. However, the disclosed methods of packaging still troublesomely involve times of transfer of a wafer or a plurality of wafers and thus relative material expense and many process steps. The current most of light emitting diodes are packaged by the methods mentioned above.