The instant invention relates to a novel wafer type semiconductor and a forming method therefor. More particularly, this invention relates to a semiconductor including a high resistance layer and wherein resistance layer formation is effected by selective diffusion from one wafer layer to another.
Prior wafer type semiconductor devices generally include a silicon substrate with successive layers of an insulating film and doped polycrystalline silicon deposited thereon. Conventional dopants for the polycrystalline silicon layer are B.sub.2 H.sub.6 and PH.sub.3.
There is a constant and chronic need for wafer type semiconductors with uniformly high resistances of several meg-ohms. cm and specific resistivities of several hundred thousand ohms/cc. Heretofore known doped polycrystalline silicon devices have not exhibited the uniform qualities desired.
Accordingly, this invention provides a wafer type semiconductor including a doped polycrystalline silicon layer which exhibits a uniformly high resistance and specific resistivity. Moreover, these wafer type semiconductors may be mass-produced with minimum variation between wafers and the resistance thereof.