Various arrangements have been devised for dissipating heat generated by power semiconductor devices such as IGBTs and MOSFETs. For example, a power device in the form of a semiconductor die can be mounted on an insulative but thermally conductive substrate (ceramic, for example) that, in turn, is thermally coupled (by solder or thermal grease) to an air-cooled or liquid-cooled heatsink. And in fact, a similar technique can be applied to both sides of a semiconductor die, as shown for example, in the U.S. Pat. No. 7,030,317 to Oman. It is also known that a power semiconductor device and substrate can be mounted in a chamber through which a liquid coolant flows; see, for example, the U.S. Pat. No. 7,016,383 to Rice.