Example embodiments relate to integrated circuit memory devices and methods of operating the same.
With an increase in the degree of integration of semiconductor memory devices, circuit elements included in semiconductor memory devices may become miniaturized as well. Thus, process margins in semiconductor memory device fabrication processes for forming the circuit elements may be reduced. As a result, the probability of a micro-bridge defect occurring between adjacent memory cells may increase. A “micro-bridge defect” may refer to a phenomenon in which leakage current may occur due to a current path unintentionally formed between adjacent memory cells. When a micro-bridge defect occurs between memory cells, data stored in the memory cells may be lost.