Al2O3 절 연막을 1층과 2층으로 코팅한 소자는 누설 전류가 매우 커서 TFT 특성을 측정할 수 없어 3층 소자만 측정하였다.
The device coated with the Al2O3 insulating film in one and two layers had a very large leakage current, so TFT characteristics might not be measured, so only the 3-layer device was measured.