original question: What other inventions are associated with the same patent as [A simple method to form crystalline compound semiconductors on silicon substrates] is?
answer: liquid-phase epitaxy on si substrate
answer type: Invention.
auxiliary information: Researchers in Dr. Jim Plummer's laboratory at Stanford University have developed a simple new method to fabricate high mobility channel materials on silicon devices.  This low-cost, CMOS-compatible process is based on a liquid phase epitaxy technique where material contacts a seed window in the bulk silicon from which high quality single crystal growth propagates. State of the art Germanium on Insulator (GeOI) devices have been fabricated and the method has been demonstrated for GaAs on oxide and can be applied to a variety of compound semiconductors, such as GaP, InP, InSb and GaSb etc., that melt congruently.  The technology could be used to easily fabricate a variety of structures, including fins, ultra-thin body, and nanowire devices.The basic patented process and its applications to GeOI is included in Stanford Docket 03-201 (U.S. Patent No. 7,498,243).  Further work with compound semiconductors is described in a pending continuation-in-part patent application included in Stanford Docket S08-404.Status of Research  The inventors have demonstrated state of the art GeOI devices and surprisingly high quality crystalline GaAs on insulator on bulk Si substrates using this technique.
What are the name of other inventions that are associated with the same patent as [A simple method to form crystalline compound semiconductors on silicon substrates] is?