Electro-absorption modulator
An electro-absorption modulator (EAM) is a semiconductor device which can be used for modulating the intensity of a laser beam via an electric voltage. Its principle of operation is based on the Franz–Keldysh effect, i.e., a change in the absorption spectrum caused by an applied electric field, which changes the bandgap energy (thus the photon energy of an absorption edge) but usually does not involve the excitation of carriers by the electric field. For modulators in telecommunications, small size and modulation voltages are desired. The EAM is candidate for use in external modulation links in telecommunications. These modulators can be realized using either bulk semiconductor materials or materials with multiple quantum dots or wells. Most EAMs are made in the form of a waveguide with electrodes for applying an electric field in a direction perpendicular to the modulated light beam. For achieving a high extinction ratio, one usually exploits the Quantum-confined Stark effect (QCSE) in a quantum well structure. Compared with an Electro-optic modulator (EOM), an EAM can operate with much lower voltages (a few volts instead of ten volts or more). They can be operated at very high speed; a modulation bandwidth of tens of gigahertz can be achieved,