Carbon Nanotube Thin Film Field Emitting Diode: Understanding the System
  Response Based on Multiphysics Modeling
Carbon Nanotube Thin Film Field Emitting
Diode: Understanding the System Response
Based on Multiphysics Modeling
N. Sinhaa, D. Roy Mahapatrab, J.T.W. Yeowa1, R.V.N. Melnikb and D.A. Jaffrayc
aDepartment of Systems Design Engineering, University of Waterloo, ON,
N2L3G1, Canada
bMathematical Modeling and Computational Sciences, Wilfrid Laurier University,
Waterloo, ON, N2L3C5, Canada
cDepartment of Radiation Physics, Princess Margaret Hospital, Toronto, ON,
M5G2M9, Canada
Abstract
In this paper, we model the evolution and self-assembly of randomly oriented
carbon nanotubes (CNTs), grown on a metallic substrate in the form of a thin film
for field emission under diode configuration. Despite high output, the current in
such a thin film device often decays drastically. The present paper is focused on
understanding this problem. A systematic, multiphysics based modelling approach
is proposed. First, a nucleation coupled model for degradation of the CNT thin film
is derived, where the CNTs are assumed to decay by fragmentation and formation of
clusters. The random orientation of the CNTs and the electromechanical interaction
are then modeled to explain the self-assembly. The degraded state of the CNTs and
the electromechanical force are employed to update the orientation of the CNTs.
Field emission current at the device scale is finally obtained by using the Fowler-
Nordheim equation and integration over the computational cell surfaces on the anode
side. The simulated results are in close agreement with the experimental results.
Based on the developed model, numerical simulations aimed at understanding the
1Corresponding author: JTWY e-mail: jyeow@engmail.uwaterloo.ca;
Tel: 1 (519) 8884567 x 2152; Fax: 1 (519) 7464791
effects of various geometric parameters and their statistical features on the device
current history are reported.
Keywords: Field emission, carbon nanotube, degradation, electrodynamics, self-
assembly.
1 Introduction
The conventional mechanism used for electron emission is thermionic in nature where
electrons are emitted from hot cathodes (usually heated filaments). The advantage
of these hot cathodes is that they work even in environments that contain a large
number of gaseous molecules. However, thermionic cathodes in general have slow
response time and they consume high power. These cathodes have limited lifetime
due to mechanical wear. In addition, the thermionic electrons have random spatial
distribution. As a result, fine focusing of electron beam is very difficult. This
adversely affects the performance of the devices such as X-ray tubes. An alternative
mechanism to extract electrons is field emission, in which electrons near the Fermi
level tunnel through the energy barrier and escape to the vacuum under the influence
of a sufficiently high external electric field. The field emission cathodes have faster
response time, consume less power and have longer life compared to thermionic
cathodes. However, field emission cathodes require ultra-high vacuum as they are
highly reactive to gaseous molecules during the field emission.
The key to the high performance of a field emission device is the behavior of
its cathode. In the past, the performance of cathode materials such as spindt-type
emitters and nanostructured diamonds for field emission was studied by Spindt et
al.1 , Gotoh et al.2 , and Zhu3 . However, the spindt type emitters suffer from
high manufacturing cost and limited lifetime. Their failure is often caused by ion
bombardment from the residual gas species that blunt the emitter cones2 . On
the other hand, nanostructured diamonds are unstable at high current densities3 .
Carbon nanotube (CNT), which is an allotrope of carbon, has potential to be used
as cathode material in field emission devices. Since their discovery by Iijima in 19914
, extensive research on CNTs has been conducted. Field emission from CNTs was
first reported in 1995 by Rinzler et al.5 , de Heer et al.6 , and Chernozatonskii et
al.7 . Field emission from CNTs has been studied extensively since then. Currently,
with significant improvement in processing technique, CNTs are among the best field
emitters. Their applications in field emission devices, such as field emission displays,
gas discharge tubes, nanolithography systems, electron microscopes, lamps, and X-
ray tube sources have been successfully demonstrated8−9 . The need for highly
controlled application of CNTs in X-ray devices is one of the main reasons for the
present study. The remarkable field emission properties of CNTs are attributed
to their geometry, high thermal conductivity, and chemical stability. Studies have
reported that CNT sources have a high reduced brightness and their energy spread
values are comparable to conventional field emitters and thermionic emitters10 .
The physics of field emission from metallic surfaces is well understood. The
current density (J) due to field emission from a metallic surface is usually obtained
by using the Fowler-Nordheim (FN) equation11
CΦ3/2
, (1)
where E is the electric field, Φ is the work function of the cathode material, and B
and C are constants. The device under consideration in this paper is a X-ray source
where a thin film of CNTs acts as the electron emitting surface (cathode). Under the
influence of sufficiently high voltage at ultra high vacuum, the electrons are extracted
from the CNTs and hit the heavy metal target (anode) to produce X-rays. However,
in the case of a CNT thin film acting as cathode, the surface of the cathode is not
smooth (like the metal emitters). In this case, the cathode consists of hollow tubes
grown on a substrate. Also, some amount of carbon clusters may be present within
the CNT-based film. An added complexity is that there is realignment of individual
CNTs due to electrodynamic interaction between the neighbouring CNTs during
field emission. At present, there is no adequate mathematical models to address
these issues. Therefore, the development of an appropriate mathematical modeling
approach is necessary to understand the behavior of CNT thin film field emitters.
1.1 Role of various physical processes in the degradation of
CNT field emitter
Several studies have reported experimental observations in favour of considerable
degradation and failure of CNT cathodes. These studies can be divided into two
categories: (i) studies related to degradation of single nanotube emitters12−17 and
(ii) studies related to degradation of CNT thin films18−23 . Dean et al.13 found
gradual decrease of field emission of single walled carbon nanotubes (SWNTs) due
to “evaporation” when large field emitted current (300nA to 2µA) was extracted. It
was observed by Lim et al.23 that CNTs are susceptible to damage by exposure to
gases such as oxygen and nitrogen during field emission. Wei et al.14 observed that
after field emission over 30 minutes at field emission current between 50 and 120nA,
the length of CNTs reduced by 10%. Wang et al.15 observed two types of structural
damage as the voltage was increased: a piece-by-piece and segment-by-segment
splitting of the nanotubes, and a layer-by-layer stripping process. Occasional spikes
in the current-voltage curves were observed by Chung et al.16 when the voltage
was increased. Avouris et al.17 found that the CNTs break down when subjected
to high bias over a long period of time. Usually, the breakdown process involves
stepwise increases in the resistance. In the experiments performed by the present
authors, peeling of the film from the substrate was observed at high bias. Some of
the physics pertinent to these effects is known but the overall phenomenon governing
such a complex system is difficult to explain and quantify and it requires further
investigation.
There are several causes of CNT failures:
(i) In case of multi-walled carbon nanotubes (MWNTs), the CNTs undergo layer-
by-layer stripping during field emission15 . The complete removal of the shells
are most likely the reason for the variation in the current voltage curves16 ;
(ii) At high emitted currents, CNTs are resistively heated. Thermal effect can
sublime a CNT causing cathode-initiated vacuum breakdown24 . Also, in case
of thin films grown using chemical vapor deposition (CVD), fewer catalytic
metals such as nickel, cobalt, and iron are observed as impurities in CNT thin
films. These metal particles melt and evaporate by high emission currents,
and abruptly surge the emission current. This results in vacuum breakdown
followed by the failure of the CNT film23 ;
(iii) Gas exposure induces chemisorption and physisorption of gas molecules on the
surface of CNTs. In the low-voltage regime, the gas adsorbates remain on the
surface of the emitters. On the other hand, in the high-voltage regime, large
emission currents resistively anneal the tips, and the strong electric field on the
locally heated tips promotes the desorption of gas adsorbates from the tip sur-
face. Adsorption of materials with high electronegativity hinders the electron
emission by intensifying the local potential barriers. Surface morphology can
be changed by an erosion of the cap of the CNT as the gases desorb reactively
from the surface of the CNTs25 ;
(iv) CVD-grown CNTs tend to show more defects in the wall as their radius in-
creases. Possibly, there are rearrangements of atomic structures (for example,
vacancy migration) resulting in the reduction of length of CNTs14 . In addition,
the presence of defects may act as a centre for nucleation for voltage-induced
oxidation, resulting in electrical breakdown16 ;
(v) As the CNTs grow perpendicular to the substrate, the contact area of CNTs
with the substrate is very small. This is a weak point in CNT films grown on
planar substrates, and CNTs may fail due to tension under the applied fields20
. Small nanotube diameters and lengths are an advantage from the stability
point of view.
Although the degradation and failure of single nanotube emitters can be either
abrupt or gradual, the degradation and failure of a thin film emitter with CNT clus-
ter is mostly gradual. The gradual degradation occurs either during initial current-
voltage measurement21 (at a fast time scale) or during measurements at constant
applied voltage over a long period of time22 (at a slow time scale). Nevertheless, it
can be concluded that the gradual degradation of thin films occurs due to the failure
of individual emitters.
Till date, several studies have reported experimental observations on CNT thin
films26 . However, from mathematical, computational and design view points, the
models and characterization methods are available only for vertically aligned CNTs
grown on the patterned surface27−28 . In a CNT film, the array of CNTs may ideally
be aligned vertically. However, in this case it is desired that the individual CNTs
be evenly separated in such a way that their spacing is greater than their height to
minimize the screening effect29 . If the screening effect is minimized following the
above argument, then the emission properties as well as the lifetime of the cathodes
are adversely affected due to the significant reduction in density of CNTs. For the
cathodes with randomly oriented CNTs, the field emission current is produced by
two types of sources: (i) small fraction of CNTs that point toward the anode and
(ii) oriented and curved CNTs subjected to electromechanical forces causing reori-
entation. As often inferred (see e.g., ref.29 ), the advantage of the cathodes with
randomly oriented CNTs is that always a large number of CNTs take part in the field
emission, which is unlikely in the case of cathodes with uniformly aligned CNTs.
Such a thin film of randomly oriented CNTs will be considered in the present study.
From the modeling point of view, its analysis becomes much more challenging. Al-
though some preliminary works have been reported (see e.g., refs.30−31 ), neither a
detailed model nor a subsequent characterization method are available that would
allow to describe the array of CNTs that may undergo complex dynamics during
the process of charge transport. In the detailed model, the effects of degradation
and fragmentation of CNTs during field emission need to be considered. However,
in the majority of analytical and design studies, the usual practice is to employ
the classical Fowler-Nordheim equation11 to determine the field emission from the
metallic surface, with correction factors to deal with the CNT tip geometry. Ideally,
one has to tune such an empirical approach to specific materials and methods used
(e.g. CNT geometry, method of preparation, CNT density, diode configuration,
range of applied voltage, etc.). Also, in order to account for the oriented CNTs and
interaction between themselves, it is necessary to consider the space charge and the
electromechanical forces. By taking into account the evolution of the CNTs, a mod-
eling approach is developed in this paper. In order to determine phenomenologically
the concentration of carbon clusters due to degradation of CNTs, we introduce a
homogeneous nucleation rate. This rate is coupled to a moment model for the evo-
lution. The moment model is incorporated in a spatially discrete sense, that is by
introducing volume elements or cells to physically represent the CNT thin film. Elec-
tromechanical forces acting on the CNTs are estimated in time-incremental manner.
The oriented state of CNTs are updated using a mechanics based model. Finally,
the current density is calculated by using the details regarding the CNT orientation
angle and the effective electric field in the Fowler-Nordheim equation.
The remainder of this paper is organized as follows: in Sec. 2, a model is pro-
posed, which combines the nucleation coupled model for CNT degradation with the
electromechanical forcing model. Section 3 illustrates the computational scheme.
Numerical simulations and the comparison of the simulated current-voltage charac-
teristics with experimental results are presented in Sec. 4.
2 Model formulation
The CNT thin film is idealized in our mathematical model by using the following
simplifications.
(i) CNTs are grown on a substrate to form a thin film. They are treated as
aggregate while deriving the nucleation coupled model for degradation phe-
nomenologically;
(ii) The film is discretized into a number of representative volume element (cell),
in which a number of CNTs can be in oriented forms along with an estimated
amount of carbon clusters. This is schematically shown in Fig. 1. The car-
bon clusters are assumed to be in the form of carbon chains and networks
(monomers and polymers);
(iii) Each of the CNTs with hexagonal arrangement of carbon atoms (shown in
Fig. 2(a)) are treated as effectively one-dimensional (1D) elastic members and
discretized by nodes and segments along its axis as shown in Fig. 2(b). Defor-
mation of this 1D representation in the slow time scale defines the orientations
of the segments within the cell. A deformation in the fast time scale (due to
electron flow) defines the fluctuation of the sheet of carbon atoms in the CNTs
and hence the resulting state of atomic arrangements. The latter aspect is ex-
cluded from the present modeling and numerical simulations, however they
will be discussed within a quantum-hydrodynamic framework in a forthcom-
ing article.
2.1 Nucleation coupled model for degradation of CNTs
Let NT be the total number of carbon atoms (in CNTs and in cluster form) in a
cell (see Fig. 1). The volume of a cell is given by Vcell = ∆Ad, where ∆A is the cell
surface interfacing the anode and d is distance between the inner surfaces of cathode
substrate and the anode. Let N be the number of CNTs in the cell, and NCNT be
the total number of carbon atoms present in the CNTs. We assume that during
field emission some CNTs are decomposed and form clusters. Such degradation and
fragmentation of CNTs can be treated as the reverse process of CVD or a similar
growth process used for producing the CNTs on a substrate. Hence,
NT = NNCNT +Ncluster , (2)
where Ncluster is the total number of carbon atoms in the clusters in a cell at time t
and is given by
Ncluster = Vcell
dn1(t) , (3)
where n1 is the concentration of carbon cluster in the cell. By combining Eqs. (2)
and (3), one has
NT − Vcell
dn1(t)
. (4)
The number of carbon atom in a CNT is proportional to its length. Let the length
of a CNT be a function of time, denoted as L(t). Therefore, one can write
NCNT = NringL(t) , (5)
where Nring is the number of carbon atoms per unit length of a CNT and can be
determined from the geometry of the hexagonal arrangement of carbon atoms in the
CNT. By combining Eqs. (4) and (5), one can write
NringL(t)
NT − Vcell
dn1(t)
. (6)
In order to determine n1(t) phenomenologically, we need to know the nature of
evolution of the aggregate in the cell. From the physical point of view, one may
expect the rate of formation of the carbon clusters from CNTs to be a function
of thermodynamic quantities, such as temperature (T ), the relative distances (rij)
between the carbon atoms in the CNTs, the relative distances between the clusters
and a set of parameters (p∗) describing the critical cluster geometry. The relative
distance rij between carbon atoms in CNTs is a function of the electromechanical
forces. Modeling of this effect is discussed in Sec. 2.2. On the other hand, the relative
distances between the clusters influence in homogenizing the thermodynamic energy,
that is, the decreasing distances between the clusters (hence increasing densities of
clusters) slow down the rate of degradation and fragmentation of CNTs and lead to
a saturation in the concentration of clusters in a cell. Thus, one can write
= f(T, rij, p
∗) . (7)
To proceed further, we introduce a nucleation coupled model32−33 , which was origi-
nally proposed to simulate aerosol formation. Here we modify this model according
to the present problem which is opposite to the process of growth of CNTs from
the gaseous phase. With this model the relative distance function is replaced by a
collision frequency function (βij) describing the frequency of collision between the
i-mers and j-mers, with
βij =
)1/6√6kT
i1/3 + j1/3
, (8)
and the set of parameters describing the critical cluster geometry by
p∗ = {vj sj g∗ d∗p} , (9)
where vj is the j-mer volume, sj is the surface area of j-mer, g
∗ is the normalized
critical cluster size, d∗p is the critical cluster diameter, k is the Boltzmann constant, T
is the temperature and ρp is the particle mass density. The detailed form of Eq. (7)
is given by four nonlinear ordinary differential equations:
dNkin
= Jkin , (10)
JkinSg
− (S − 1)
, (11)
= Jkind
p + (S − 1)B1Nkin , (12)
JkinSg
∗2/3s1
2πB1S(S − 1)M1
, (13)
where Nkin is the kinetic normalization constant, Jkin is the kinetic nucleation rate,
S is the saturation ratio, An is the total surface area of the carbon cluster and M1
is the moment of cluster size distribution. The quantities involved are expressed as
, M1 =
∫ dmaxp
n(dp, t)dp
d(dp) , (14)
Nkin =
exp(Θ) , Jkin =
27(lnS)2
, (15)
, d∗p =
kT lnS
, B1 = 2nsv1
, (16)
where ns is the equilibrium saturation concentration of carbon cluster, d
p is the
maximum diameter of the clusters, n(dp, t) is the cluster size distribution function,
dp is the cluster diameter, mj is the mass of j-mer, Θ is the dimensionless surface
tension given by
, (17)
σ is the surface tension. In this paper, we have considered i = 1 and j = 1 for numer-
ical simulations, that is, only monomer type clusters are considered. In Eqs. (10)-
(13), the variables are n1(t), S(t), M1(t) and An(t), and all other quantities are
assumed constant over time. In the expression for moment M1(t) in Eq. (14), the
cluster size distribution in the cell is assumed to be Gaussian, however, random
distribution can be incorporated. We solve Eqs. (10)-(13) using a finite difference
scheme as discussed in Sec. 3. Finally, the number of CNTs in the cell at a given time
is obtained with the help of Eq. (6), where the reduced length L(t) is determined
using geometric properties of the individual CNTs as formulated next.
2.2 Effect of CNT geometry and orientation
It has been discussed in Sec. 1.1 that the geometry and orientation of the tip of the
CNTs are important factors in the overall field emission performance of the film and
must be considered in the model.
As an initial condition, let L(0) = h at t = 0, and let h0 be the average height of
the CNT region as shown in Fig. 1. This average height h0 is approximately equal
to the height of the CNTs that are aligned vertically. If ∆h is the decrease in the
length of a CNT (aligned vertically or oriented as a segment) over a time interval
∆t due to degradation and fragmentation, and if dt is the diameter of the CNT,
then the surface area of the CNT decreased is πdt∆h. By using the geometry of the
CNT, the decreased surface area can be expressed as
πdt∆h = Vcelln1(t)
s(s− a1)(s− a2)(s− a3)
, (18)
where Vcell is the volume of the cell as introduced in Sec. 2.1, a1, a2, a3 are the lattice
constants, and s = 1
(a1 + a2 + a3) (see Fig. 2(a)). The chiral vector for the CNT is
expressed as
C h = n~a1 +m~a2 , (19)
where n and m are integers (n ≥ |m| ≥ 0) and the pair (n,m) defines the chirality
of the CNT. The following properties hold: ~a1.~a1 = a
1, ~a2.~a2 = a
2, and 2~a1.~a2 =
a21 + a
2 − a23. With the help of these properties the circumference and the diameter
of the CNT can be expressed as, respectively34 ,
|−→C h| =
n2a21 +m
2a22 + nm(a
1 + a
2 − a23) , dt =
|−→C h|
, (20)
Let us now introduce the rate of degradation of the CNT or simply the burning rate
as vburn = lim
∆h/∆t. By dividing both side of Eq. (18) by ∆t and by applying
limit, one has
πdtvburn = Vcell
dn1(t)
s(s− a1)(s− a2)(s− a3)
, (21)
By combining Eqs. (20) and (21), the burning rate is finally obtained as
vburn = Vcell
dn1(t)
[ s(s− a1)(s− a2)(s− a3)
n2a21 +m
2a22 + nm(a
1 + a
2 − a23)
. (22)
In Fig. 3 we show a schematic drawing of the CNTs almost vertically aligned,
that is along the direction of the electric field E(x, y). This electric field E(x, y) is
assumed to be due to the applied bias voltage. However, there will be an additional
but small amount of electric field due to several localized phenomena (e.g., electron
flow in curved CNTs, field emission from the CNT tip etc.). Effectively, we assume
that the distribution of the field parallel to z-axis is of periodic nature (as shown
in Fig. 3) when the CNT tips are vertically oriented. Only a cross-sectional view in
the xz plane is shown in Fig. 3 because only an array of CNTs across x-direction
will be considered in the model for simplicity. Thus, in this paper, we shall restrict
our attention to a two-dimensional problem, and out-of-plane motion of the CNTs
will not be incorporated in the model.
To determine the effective electric field at the tip of a CNT oriented at an angle
θ as shown in Fig. 3, we need to know the tip coordinate with respect to the cell
coordinate system. If it is assumed that a CNT tip was almost vertically aligned at
t = 0 (as it is the desired configuration for the ideal field emission cathode), then
its present height is L(t) = h0 − vburnt and the present distance between the tip
and the anode is dg = d − L(t) = d − h0 + vburnt. We assume that the tip electric
field has a z-dependence of the form E0L(t)/dg, where E0 = V/d and V is the
applied bias voltage. Also, let (x, y) be the deflection of the tip with respect to its
original location and the spacing between the two neighboring CNTs at the cathode
substrate is 2R. Then the electric field at the deflected tip can be approximated as
Ez′ =
x2 + y2
(h0 − vburnt)
(d− h0 + vburnt)
E0 , θ(t) ≤ θc , (23)
where θc is a critical angle to be set during numerical calculations along with the
condition: Ez′ = 0 when θ(t) > θc. This is consistent with the fact that those CNTs
which are low lying on the substrate do not contribute to the field emission. The
electric field at the individual CNT tip derived here is defined in the local coordinate
system (X ′, Z ′) as shown in Fig. 3. The components of the electric field in the cell
coordinate system (X, Y, Z) is given by the following transformation:
 =
nz lz mz√
1− n2z
−lznz√
1−n2z
mznz√
1−n2z
0 −lznz√
1−n2z
1−n2z
 , (24)
where nz, lz, mz are the direction cosines. According to the cell coordinate system
in Figs. 1 and 3, nz = cos θ(t), lz = sin θ(t), and mz = 0. Therefore, Eq. (24) can
be rewritten as
 =
cos θ(t) sin θ(t) 0√
1− cos2 θ(t) − cos θ(t) 0
0 − cos θ(t) −1
 . (25)
By simplifying Eq. (25), we get
Ez = Ez′ cos θ(t) , Ex = Ez′ sin θ(t) . (26)
Note that the identical steps of this transformation also apply to a generally oriented
(θ 6= 0) segment of CNT as idealized in Fig. 2(b). The electric field components Ez
and Ex are later used for calculation of the electromechanical force acting on the
CNTs. Since in this study we aim at estimating the current density at the anode due
to the field emission from the CNT tips, we also use Ez from Eq. (26) to compute
the output current based on the Fowler-Nordheim equation (1).
2.3 Electromechanical forces
For each CNT, the angle of orientation θ(t) is dependent on the electromechanical
forces. Such dependence is geometrically nonlinear and it is not practical to solve
the problem exactly, especially in the present situation where a large number of
CNTs are to be dealt with. However, it is possible to solve the problem in time-
dependent manner with an incremental update scheme. In this section we derive
the components of the electromechanical forces acting on a generally oriented CNT
segment. The numerical solution scheme based on an incremental update scheme
will be discussed in Sec. 3.
From the studies reported in published literature and based on the discussions
made in Sec. 1.1, it is reasonable to expect that the major contribution is due to (i)
the Lorentz force under electron gas flow in CNTs (a hydrodynamic formalism), (ii)
the electrostatic force (background charge in the cell), (iii) the van der Waals force
against bending and shearing of MWNT and (iv) the ponderomotive force acting on
the CNTs.
2.3.1 Lorentz force
It is known that the electrical conduction and related properties of CNTs depend on
the mechanical deformation and the geometry of the CNT. In this paper we model
the field emission behaviour of the CNT thin film by considering the time-dependent
electromechanical effects, whereas the electronic properties and related effects are
incorporated through the Fowler-Nordheim equation empirically. Electronic band-
structure calculations are computationally prohibitive at this stage and at the same
spatio-temporal scales considered for this study. However, a quantum-hydrodynamic
formalism seems practical and such details will be dealt in a forthcoming article.
Within the quantum-hydrodynamic formalism, one generally assumes the flow of
electron gas along the cylindrical sheet of CNTs. The associated electron density
distribution is related to the energy states along the length of the CNTs including the
tip region. What is important for the present modeling is that the CNTs experience
Lorentz force under the influence of the bias electric field as the electrons flow from
the cathode substrate to the tip of a CNT. The Lorentz force is expressed as
~fl = e(n̂0 + n̂1) ~E ≈ en̂0 ~E , (27)
where e is the electronic charge, n̂0 is the surface electron density corresponding to
the Fermi level energy, n̂1 is the electron density due to the deformation in the slow
time scale, and phonon and electromagnetic wave coupling at the fast time scale,
and ~E is the electric field. The surface electron density corresponding to the Fermi
level energy is expressed as35
n̂0 =
, (28)
where b is the interatomic distance and ∆ is the overlap integral (≈ 2eV for carbon).
The quantity b can be related to the mechanical deformation of the 1D segments (See
Fig. 2) and formulations reported by Xiao et al.36 can be employed. For simplicity,
the electron density fluctuation n̂1 is neglected in this paper. Now, with the electric
field components derived in Eq. 26, the components of the Lorentz force acting along
z and x directions can now be written as, respectively,
flz = πdten̂0Ez , flx = πdten̂0Ex ≈ 0 . (29)
2.3.2 Electrostatic force
In order to calculate the electrostatic force, the interaction among two neighboring
CNTs is considered. For such calculation, let us consider a segment ds1 on a CNT
(denoted 1) and another segment ds2 on its neighboring CNT (denoted 2). These
are parts of the representative 1D member idealized as shown in Fig. 2(b). The
charges associated with these two segments can be expressed as
q1 = en̂0πd
t ds1 , q2 = en̂0πd
t ds2 , (30)
where d
t and d
t are diameters of two neighbouring CNTs (1) and (2). The
electrostatic force on the segment ds1 by the segment ds2 is
4π��0
where � is the effective permittivity of the aggregate of CNTs and carbon clusters,
�0 is the permittivity of free space, and r12 is the effective distance between the
centroids of ds1 and ds2. The electrostatic force on the segment ds1 due to charge
in the entire segment (s2) of the neighboring CNT (see Fig. 4) can be written as
4π��0
en̂0πd
t ds1en̂0πd
ds2 .
The electrostatic force per unit length on s1 due to s2 is then
4π��0
(πen̂0)
ds2 . (31)
The differential of the force dfc acts along the line joining the centroids of the
segments ds1 and ds2 as shown in Fig. 4. Therefore, the components of the total
electrostatic force per unit length of CNT (1) in X and Z directions can be written
as, respectively,
fcx =
dfc cosφ =
4π��0
(πen̂0)
cosφ ds2
4π��0
h0/∆s2∑
(πen̂0)
cosφ ∆s2 , (32)
fcz =
dfc sinφ =
4π��0
(πen̂0)
sinφ ds2
4π��0
h0/∆s2∑
(πen̂0)
sinφ ∆s2 , (33)
where φ is the angle the force vector dfc makes with the X-axis. For numerical
computation of the above integrals, we compute the angle φ = φ(sk1, s
2) and r12 =
r12(s
2) at each of the centroids of the segments between the nodes k + 1 and k,
where the length of the segments are assumed to be uniform and denoted as ∆s1
for CNT (1) and ∆s2 for CNT (2). As shown in Fig. 4, the distance r12 between the
centroids of the segments ds1 and ds2 is obtained as
r12 =
(d1 − lx2 + lx1)
2 + (lz1 − lz2)
, (34)
where d1 is the spacing between the CNTs at the cathode substrate, lx1 and lx2 are
the deflections along X-axis, and lz1 and lz2 are the deflections along Z-axis. The
angle of projection φ is expressed as
φ = tan−1
( lz1 − lz2
d1 − lx2 + lx1
. (35)
The deflections lx1 , lz1 , lx2 , and lz2 are defined as, respectively,
lx1 =
ds1 sin θ1 ≡
∆s1 sin θ
1 (36)
lz1 =
ds1 cos θ1 ≡
∆s1 cos θ
1 (37)
lx2 =
ds2 sin θ2 ≡
∆s2 sin θ
2 (38)
lz2 =
ds2 cos θ2 ≡
∆s2 cos θ
2 . (39)
Note that the total electrostatic force on a particular CNT is to be obtained by
summing up all the binary contributions within the cell, that is by summing up
Eqs. (32) and (33) over the upper integer number of the quantity N − 1, where N
is the number of CNTs in the cell as discussed in Sec. 2.1.
2.3.3 The van der Waals force
Next, we consider the van der Waals effect. The van der Waals force plays important
role not only in the interaction of the CNTs with the substrate, but also in the
interaction between the walls of MWNTs and CNT bundles. Due to the overall
effect of forces and flexibility of the CNTs (here assumed to be elastic 1D members),
the cylindrical symmetry of CNTs is destroyed, leading to their axial and radial
deformations. The change in cylindrical symmetry may significantly affect the the
properties of CNTs37−38 . Here we estimate the van der Waals forces due to the
interaction between two concentric walls of the MWCNTs.
Let us assume that the lateral and the longitudinal displacements of a CNT be
ux′ and uz′ , respectively. We use updated Lagrangian approach with local coordi-
nate system for this description (similar to (X ′, Z ′) system shown in Fig. 3), where
the longitudinal axis coincides with Z ′ and the lateral axis coincides with X ′. Such
a description is consistent with the incremental procedure to update the CNT orien-
tations in the cells as adopted in the computational scheme. Also, due to the large
length-to-diameter ratio (L(t)/dt), let the kinematics of the CNTs, which are ideal-
ized in this work as 1D elastic members, be governed by that of an Euler-Bernoulli
beam. Therefore, the kinematics can be written as
z′ = u
z′0 − r
(m)∂u
, (40)
where the superscript (m) indicates the mth wall of the MWNT with r(m) as its
radius and uz′0 is the longitudinal displacement of the center of the cylindrical cross-
section. Under tension, bending moment and lateral shear force, the elongation of
one wall relative to its neighboring wall is
z′ = u
(m+1)
z′ − u
z′ = r
(m+1)∂u
(m+1)
− r(m)
≈ (r(m+1) − r(m))
, (41)
where we assume u
x′ = u
(m+1)
x′ = ∆x′ as the lateral displacement as some function
of tensile force or compression buckling or pressure in the thin film device. The
lateral shear stress (τ
vs ) due to the van der Waals effect can now be written as
τ (m)vs = Cvs
, (42)
where Cvs is the van der Waals coefficient. Hence, the shear force per unit length
can be obtained by integrating Eq. (42) over the individual wall circumferences and
then by summing up for all the neighboring pair interactions, that is,
fvs =
reff dψ =
(r(m+1) − r(m))∂∆x′
r(m+1) + r(m)
⇒ fvs =
πCvs[(r
(m+1))2 − (r(m))2]
. (43)
The components of van der Waals force in the cell coordinate system (X ′, Z ′) is then
obtained as
fvsz = fvs sin θ(t) , fvsx = fvs cos θ(t) . (44)
2.3.4 Ponderomotive force
Ponderomotive force, which acts on free charges on the surface of CNTs, tends to
straighten the bent CNTs under the influence of electric field in the Z-direction.
Furthermore, the ponderomotive forces induced by the applied electric field stretch
every CNT39 . We add this effect by assuming that the free charge at the tip region
is subjected to Ponderomotive force, which is computed as40
fpz =
0∆A cos θ(t) , fpx = 0 , (45)
where ∆A is the surface area of the cell on the anode side, fpz is the Z component
of the Ponderomotive force and the X component fpx is assumed to be negligible.
2.4 Modelling the reorientation of CNTs
The net force components acting on the CNTs along Z and X directions can be
expressed as, respectively,
(flz + fvzz) ds+ fcz + fpz , (46)
(flx + fvsx) ds+ fcx + fpx . (47)
For numerical computation, at each time step the force components obtained using
Eqs. (46) and (47) are employed to update the curved shape S ′(x′ + ux′ , z
′ + uz′),
where the displacements are approximated using simple beam mechanics solution:
uz′ ≈
E ′A0
(f j+1z − f
z )(z
′j+1 − z′j) , (48)
ux′ ≈
3E ′A2
(f j+1x − f
x′j+1 − x′j
, (49)
where A0 is the effective cross-sectional area, A2 is the area moment, E
′ is the
modulus of elasticity for the CNT under consideration. The angle of orientation,
θ(t), of the corresponding segment of the CNT, that is between the node j + 1 and
node j, is given by
θ(t) = θ(t)j = tan−1
(xj+1 + uj+1x )− (xj + ujx)
(zj+1 + u
z )− (zj + ujz)
, (50)
Γ(θ(t−∆t)j)
]{ ujx′
, (51)
where Γ is the usual coordinate transformation matrix which maps the displace-
ments (ux′ , uz′) defined in the local (X
′, Z ′) coordinate system into the displace-
ments (ux, uz) defined in the cell coordinate system (X,Z). For this transformation,
we employ the angle θ(t−∆t) obtained in the previous time step and for each node
j = 1, 2, . . ..
3 Computational scheme
As already highlighted in the previous section, we model the CNTs as generally
oriented 1D elastic members. These 1D members are represented by nodes and
segments. With given initial distribution of the CNTs in the cell, we discretize
the time into uniform steps ti+1 − ti = ∆t. The computational scheme involves
three parts: (i) discretization of the nucleation coupled model for degradation of
CNTs derived in Sec. 2.1, (ii) incremental update of the CNT geometry using the
estimated electromechanical force and (iii) computation of the field emission current
in the device.
3.1 Discretization of the nucleation coupled model for degra-
dation
With the help of Eqs. (14)-(16) and by eliminating the kinetic nucleation rate Nkin,
we first rewrite the simplified form of Eqs. (10)-(13), which are given by, respectively,
27(lnS)2
, (52)
2β11nsΘS
2π(lnS)3
27(ln s)2
(S − 1)An , (53)
27(lnS)2
+ 2n2sv1 exp(Θ)
(S − 1) , (54)
2π(lnS)2
27(lnS)2
+ 4πnsv1
M1(S − 1) . (55)
By eliminating dS/dt from Eq. (52) with the help of Eq. (53) and by applying a
finite difference formula in time, we get
n1i − n1i−1
ti − ti−1
27(lnSi−1)2
Θ− 4Θ
27(lnSi−1)2
(lnSi−1)3
n21i(Si − 1)An(i)
. (56)
Similarly, Eqs. (53)-(55) are discretized as, respectively,
Si − Si−1
ti − ti−1
Θ− 4Θ
27(lnSi−1)2
(lnSi−1)3
n1i(Si − 1)Ani
, (57)
M1i −M1i−1
ti − ti−1
27(lnSi−1)2
+ 2v1
n21i(Si − 1)
exp(Θ)
, (58)
Ani − Ani−1
ti − ti−1
β11s1Θ
5/2n1i
Θ− 4Θ
27(lnSi−1)2
(lnSi−1)2
+4πv1
(Si−1)M1i . (59)
By simplifying Eq. (56) with the help of Eqs. (57)-(59), we get a quadratic polyno-
mial of the form
(b1 − b2 − b3)n1i
2 − n1i + n1i−1 = 0 , (60)
where
b1 = ∆t
27(lnSi−1)2
, (61)
b2 = ∆t
Θ− 4Θ
27(lnSi−1)2
Si(lnSi−1)3
, (62)
b3 = ∆t
Si − 1
. (63)
Solution of Eq. (60) yields two roots (denoted by superscripts (1, 2)):
(1,2)
2(b1 − b2 − b3)
1− 4n1i−1(b1 − b2 − b3)
2(b1 − b2 − b3)
. (64)
For the first time step, the values of b1, b2 and b3 are obtained by applying the
initial conditions: S(0) = S0, n10 = n0, and An0 = An0. Since the n1i must be real
and finite, the following two conditions are imposed: 1−4n1i−1(b1− b2− b3) ≥ 0 and
(b1 − b2 − b3) 6= 0. Also, it has been assumed that the degradation of CNTs is an
irreversible process, that is, the reformation of CNTs from the carbon cluster does
not take place. Therefore, an additional condition of positivity, that is, n1i > n1i−1
is introduced while performing the time stepping. Along with the above constraints,
the n1 history in a cell is calculated as follows:
• If n(1)1i > n1i−1 and n
, then n1i = n
• Else if n(2)1i > n1i−1 , then n1i = n
• Otherwise the value of n1 remains the same as in the previous time step, that
is, n1i = n1i−1 .
Simplification of Eq. (57) results in the following equation:
2 + (c1 + c2 − Si−1)Si − c1 = 0 , (65)
where
c1 = ∆tn1iAni
, (66)
c2 = ∆t
Θ− 4Θ
27(lnSi−1)2
(lnSi−1)3
. (67)
Solution of Eq. (65) yields the following two roots:
Si = −
(c1 + c2 − Si−1)±
c1 + c2 − S2i−1 + 4c1 . (68)
For the first time step, c1 and c2 are calculated with the following conditions: n11
from the above calculation, S(0) = S0, and An0 = An0. Realistically, the saturation
ratio S cannot be negative or equal to one. Therefore, Si > 0 yields c1 > 0.
While solving for An, the Eq. (59) is solved with the values of n1 and S from the
above calculations and the initial conditions An0 = An0, M10 = M0. The value of
M10 was calculated by assuming n(dp, t) as a standard normal distribution function.
3.2 Incremental update of the CNT geometry
At each time time step t = ti, once the n1i is solved, we are in a position to compute
the net electromechanical force (see Sec. 2.3) as
fi = fi(E0, n1i−1 , θ(ti−1)) . (69)
Subsequently, the orientation angle for each segment of each CNT is then obtained
as (see Sec. 2.4)
θ(ti)
j = θ(fi)
j (70)
and it is stored for future calculations. A critical angle, (θc), is generally employed
with θc ≈ π/4 to π/2.5 for the present numerical simulations. For θ ≤ θc, the
meaning of fz is the “longitudinal force” and the meaning of fx is the “lateral force”
in the context of Eqs. (48) and (49). When θ > θc, the meanings of fz and fx are
interchanged.
3.3 Computation of field emission current
Once the updated tip angles and the electric field at the tip are obtained at a
particular time step, we employ Eq. (1) to compute the current density contribution
from each CNT tip, which can be rewritten as
BE2zi
CΦ3/2
, (71)
with B = (1.4 × 10−6) × exp(9.8929 × Φ−1/2) and C = 6.5 × 107 taken from ref.41
. The device current (Ii) from each computational cell with surface area ∆A at the
anode at the present time step ti is obtained by summing up the current density
over the number of CNTs in the cell, that is,
Ii = ∆A
Ji . (72)
Fig. 5 shows the flow chart of the computational scheme discussed above.
At t = 0, in our model, the CNTs can be randomly oriented. This random
distribution is parameterized in terms of the upper bound of the CNT tip deflection,
which is given by ∆xmax = h/q, where h is the CNT length and q is a real number.
In the numerical simulations which will be discussed next, the initial tip deflections
can vary widely. The following values of the upper bound of the tip deflection have
been considered: ∆xmax = h0/(5 + 10p), (p = 0, 1, 2, ..., 9). The tip deflection ∆x is
randomized between zero and these upper bounds. Simulation for each initial input
with a randomized distribution of tip deflections was run for a number of times and
the maximum, minimum, and average values of the output current were obtained.
In the first set, the simulations were run for a uniform height, radius and spacing
of CNTs in the film. Subsequently, the height, the radius and the spacing were
varied randomly within certain bounds, and their effects on the output current were
analyzed.
4 Results and discussions
The CNT film under study in this work consists of randomly oriented multi-walled
nanotubes (MWNTs). The film samples were grown on a stainless steel substrate.
The film has a surface area of 1cm2 and thickness of 10−14µm. The anode consists
of a 1.59mm thick copper plate with an area of 49.93mm2. The current-voltage
history is measured over a range of DC bias voltages for a controlled gap between
the cathode and the anode. In the experimental set-up, the device is placed within a
vacuum chamber of a multi-stage pump. The gap (d) between the cathode substrate
and the anode is controlled from outside by a micrometer.
4.1 Degradation of the CNT thin films
We assume that at t = 0, the film contains negligible amount of carbon cluster.
To understand the phenomena of degradation and fragmentation of the CNTs, fol-
lowing three sets of input are considered: n1(0) = 100, 150, 500. The other initial
conditions are set as S(0) = 100, M1(0) = 2.12× 10−16, An(0) = 0, and T = 303K.
Fig. 6 shows the three n1(t) histories over a small time duration (160s) for the three
cases of n1(0), respectively. For n1(0) = 100 and 150, the time histories indicate that
the rate of decay is very slow, which in turn implies longer lifetime of the device.
For n1(0) = 500, the time history indicates that the CNTs decay comparatively
faster, but still insignificant for the first 34s, and then the cluster concentration
becomes constant. It can be concluded from the above three cases that the rate of
decay of CNTs is generally slow under operating conditions, which implies stable
performance and longer lifetime of the device if this aspect is considered alone.
Next, the effect of variation in the initial saturation ratio S(0) on n1(t) history
is studied. The value of n1(0) is set as 100, while other parameters are assumed to
have identical value as considered previously. The following three initial conditions
in S(0) are considered: S(0) = 50, 100, 150. Fig. 7 shows the n1(t) histories. It
can be seen in this figure that for S(0) = 100 (moderate value), the carbon cluster
concentration first increases and then tends to a steady state. This was also observed
in Fig. (6). For higher values of S(0), n1 increases exponentially over time. For
S(0) = 50, a smaller value, the decay is not observed at all. This implies that a
small value of S(0) is favorable for longer lifetime of the cathode. However, a more
detailed investigation on the physical mechanism of cluster formation and CNT
fragmentation may be necessary, which is an open area of research.
At t = 0, we assign random orientation angles (θ(0)j) to the CNT segments.
For a cell containing 100 CNTs, Fig. 8 shows the terminal distribution of the CNT
tip angles (at t = 160s corresponding to the n1(0) = 100 case discussed previously)
compared to the initial distribution (at t = 0). The large fluctuations in the tip
angles for many of the CNTs can be attributed to the significant electromechanical
interactions.
4.2 Current-voltage characteristics
In the present study, the quantum-mechanical treatment has not been explicitly
carried out, and instead, the Fowler-Nordheim equation has been used to calculate
the current density. In such a semi-empirical calculation, the work function Φ42
for the CNTs must be known accurately under a range of conditions for which the
device-level simulations are being carried out. For CNTs, the field emission electrons
originate from several excited energy states (non metallic electronic states)43−44 .
Therefore, the the work function for CNTs is usually not well identified and is more
complicated to compute than for metals. Several methodologies for calculating the
work function for CNTs have been proposed in literature. On the experimental
side, Ultraviolet Photoelectron Spectroscopy (UPS) was used by Suzuki et al.45
to calculate the work function for SWNTs. They reported a work function value
of 4.8 eV for SWNTs. By using UPS, Ago et al.46 measured the work function
for MWNTs as 4.3 eV. Fransen et al.47 used the field emission electronic energy
distribution (FEED) to investigate the work function for an individual MWNT that
was mounted on a tungsten tip. Form their experiments, the work function was
found to be 7.3±0.5 eV. Photoelectron emission (PEE) was used by Shiraishi et al.48
to measure the work function for SWNTs and MWNTs. They measured the work
function for SWNTs to be 5.05 eV and for MWNTs to be 4.95 eV. Experimental
estimates of work function for CNTs were carried out also by Sinitsyn et al.49 .
Two types were investigated by them: (i) 0.8-1.1 nm diameter SWNTs twisted into
ropes of 10 nm diameter, and (ii) 10 nm diameter MWNTs twisted into 30-100 nm
diameter ropes. The work functions for SWNTs and MWNTs were estimated to
be 1.1 eV and 1.4 eV, respectively. Obraztsov et al.50 reported the work function
for MWNTs grown by CVD to be in the range 0.2-1.0 eV. These work function
values are much smaller than the work function values of metals (≈ 3.6 − 5.4eV ),
silicon(≈ 3.30 − 4.30eV ), and graphite(≈ 4.6 − 5.4eV ). The calculated values of
work function of CNTs by different techniques is summarized in Table 1. The
wide range of work functions in different studies indicates that there are possibly
other important effects (such as electromechanical interactions and strain) which also
depend on the method of sample preparation and different experimental techniques
used in those studies. In the present study, we have chosen Φ = 2.2eV .
The simulated current-voltage (I-V) characteristics of a film sample for a gap
d = 34.7µm is compared with the experimental measurement in Fig. 9. The average
height, the average radius and the average spacing between neighboring CNTs in the
film sample are taken as h0 = 12µm, r = 2.75nm, and d1 = 2µm. The simulated I-V
curve in Fig. 9 corresponds to the average of the computed current for the ten runs.
This is the first and preliminary simulation of its kind based on a multiphysics
based modeling approach and the present model predicts the I-V characteristics
which is in close agreement with the experimental measurement. However, the above
comparison indicates that there are some deviations near the threshold voltage of
≈ 500 − 600V , which needs to be looked at by improving the model as well as
experimental materials and method.
4.3 Field emission current history
Next, we simulate the field emission current histories for the similar sample con-
figuration as used previously, but for three different parametric variations: height,
radius, and spacing. Current histories are shown for constant bias voltages of 440V ,
550V and 660V .
4.3.1 Effects of uniform height, uniform radius and uniform spacing
In this case, the values of height, radius, and the spacing between the neighboring
CNTs are kept identical to the previous current-voltage calculation in Sec. 4.2.
Fig. 10(a), (b) and (c) show the current histories for three different bias voltages
of 440V , 550V and 660V . In the subfigures, we plot the minimum, the maximum
and the average currents over time as post-processed from a number of runs with
randomized input distributions. At a bias voltage of 440V , the average current
decreases from 1.36× 10−8A to 1.25× 10−8A in steps. The maximum current varies
between 1.86×10−8A to 1.68×10−8A, whereas the minimum current varies between
2.78 × 10−9A to 2.52 × 10−9A. Comparisons among the scales in the sub-figures
indicate that there is an increase in the order of magnitude of current when the bias
voltage is increased. The average current decreases from 1.25×10−5A to 1.06×10−5A
in steps when the bias voltage is increased from 440V to 550V . At the bias voltage of
660V , the average value of the current decreases from 1.26×10−3A to 1.02×10−3A.
The increase in the order of magnitude in the current at higher bias voltage is due
to the fact that the electrons are extracted with a larger force. However, at a higher
bias voltage, the current is found to decay faster (see Fig. 10(c)).
4.3.2 Effects of non-uniform radius
In this case, the uniform height and the uniform spacing between the neighboring
CNTs are taken as h0 = 12µm and d1 = 2µm, respectively. Random distribution of
radius is given with bounds 1.5−4nm. The simulated results are shown in Fig. 11. At
the bias voltage of 440V , the average current decreases from 1.37× 10−8A at t = 1s
to 1.23× 10−8A at t = 138s in steps and then the current stabilizes. The maximum
current varies between 1.87× 10−8A to 1.72× 10−8A, whereas the minimum current
varies between 2.53 × 10−9A to 2.52 × 10−9A. The average current decreases from
1.26× 10−5A to 1.08× 10−5A in steps when the bias voltage is increased from 440V
to 550V . At a bias voltage of 660V , the average current decreases from 1.26×10−3A
to 1.02 × 10−3A. As expected, a more fluctuation between the maximum and the
minimum current have been observed here when compared to the case of uniform
radius.
4.3.3 Effects of non-uniform height
In this case, the uniform radius and the uniform spacing between neighboring CNTs
are taken as r = 2.75nm and d1 = 2µm, respectively. Random initial distribution
of the height is given with bounds 10 − 14µm. The simulated results are shown in
Fig. 12. At the bias voltage of 440V , the average current decreases from 1.79×10−6A
to 1.53×10−6A. The maximum current varies between 6.33×10−6A to 5.89×10−6A,
whereas the minimum current varies between 2.69× 10−10A to 4.18× 10−10A. The
average current decreases from 0.495 × 10−3A to 0.415 × 10−3A in steps when the
bias voltage is increased from 440V to 550V . At the bias voltage of 660V , the
average current decreases from 0.0231A to 0.0178A. The device response is found
to be highly sensitive to the height distribution.
4.3.4 Effects of non-uniform spacing between neighboring CNTs
In this case, the uniform height and the uniform radius of the CNTs are taken as h0 =
12µm and r = 2.75nm, respectively. Random distribution of spacing d1 between
the neighboring CNTs is given with bounds 1.5− 2.5µm. The simulated results are
shown in Fig. 13. At the bias voltage of 440V , the average current decreases from
1.37× 10−8A to 1.26× 10−8A. The maximum current varies between 1.89× 10−8A
to 1.76 × 10−8A, whereas the minimum current varies between 2.86 × 10−9A to
2.61× 10−9A. The average current decreases from 1.24× 10−5A to 1.08× 10−5A in
steps when the bias voltage is increased from 440V to 550V . At the bias voltage of
660V , the average current decreases from 1.266 × 10−3A to 1.040 × 10−3A. There
is a slight increase in the order of magnitude of current for non-uniform spacing. It
can attributed to the reduction in screening effect at some emitting sites in the film
where the spacing is large.
5 Conclusions
In this paper, we have developed a multiphysics based modelling approach to analyze
the evolution of the CNT thin film. The developed approach has been applied to
the simulation of the current-voltage characteristics at the device scale. First, a
phenomenological model of degradation and fragmentation of the CNTs has been
derived. From this model we obtain degraded state of CNTs in the film. This
information, along with electromechanical force, is then employed to update the
initially prescribed distribution of CNT geometries in a time incremental manner.
Finally, the device current is computed at each time step by using the semi-empirical
Fowler-Nordheim equation and integration over the computational cell surfaces on
the anode side. The model thus handles several important effects at the device
scale, such as fragmentation of the CNTs, formation of the carbon clusters, and self-
assembly of the system of CNTs during field emission. The consequence of these
effects on the I-V characteristics is found to be important as clearly seen from the
simulated results which are in close agreement with experiments. Parametric studies
reported in the concluding part of this paper indicate that the effects of the height
of the CNTs and the spacing between the CNTs on the current history is significant
at the fast time scale.
There are several other physical factors, such as the thermoelectric heating,
interaction between the cathode substrate and the CNTs, time-dependent electronic
properties of the CNTs and the clusters, ballistic transport etc., which may be
important to consider while improving upon the model developed in the present
paper. Effects of some of these factors have been discussed in the literature before
in the context of isolated CNTs, but little is known at the system level. We note also
that in the present model, the evolution mechanism is not fully coupled with the
electromechanical forcing mechanism. The incorporation of the above factors and
the full systematic coupling into the modelling framework developed here presents
an appealing scope for future work.
Acknowledgment The authors would like to thank Natural Sciences and Engi-
neering Research Council (NSERC), Canada, for financial support.
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Table 1: Summary of work function values for CNTs.
Type of CNT Φ (eV ) Method
SWNT 4.8 Ultraviolet photoelectron spectroscopy45
MWNT 4.3 Ultraviolet photoelectron spectroscopy46
MWNT 7.3±0.5 Field emission electronic energy distribution47
SWNT 5.05 Photoelectron emission48
MWNT 4.95 Photoelectron emission48
SWNT 1.1 Experiments49
MWNT 1.4 Experiments49
MWNT 0.2-1.0 Numerical approximation50
Figure 1: Schematic drawing of the CNT thin film for model idealization.
(a) (b)
Figure 2: Schematic drawing showing (a) hexagonal arrangement of carbon atoms
in CNT and (b) idealization of CNT as a one-dimensional elastic member.
Figure 3: CNT array configuration.
Figure 4: Schematic description of neighboring CNT pair interaction for calculation
of electrostatic force.
Figure 5: Computational flow chart for calculating the device current.
Figure 6: Variation of carbon cluster concentration over time. Initial condition:
S(0) = 100, T = 303K, M1(0) = 2.12× 10−16, An(0) = 0.
Figure 7: Variation of carbon cluster concentration over time. Initial condition:
n1(0) = 100m
−3, T = 303K, M1(0) = 2.12× 10−16, An(0) = 0.
Figure 8: Distribution of tip angles over the number of CNTs.
Figure 9: Comparison of simulated current-voltage characteristics with experiments.
(a) (b) (c)
Figure 10: Simulated current histories for uniform radius, uniform height and uni-
form spacing of CNTs at a bias voltage of (a) 440 V, (b) 550 V, and (c) 660 V.
(a) (b) (c)
Figure 11: Simulated current histories for non-uniform radius of CNTs at a bias
voltage of (a) 440 V, (b) 550 V, and (c) 660 V.
(a) (b) (c)
Figure 12: Simulated current histories for non-uniform height of CNTs at a bias
voltage of (a) 440 V, (b) 550 V, and (c) 660 V.
(a) (b) (c)
Figure 13: Simulated current histories for non-uniform spacing between neighboring
CNTs at a bias voltage of (a) 440 V, (b) 550 V, and (c) 660 V.
	Introduction
	Role of various physical processes in the degradation of CNT field emitter
	Model formulation
	Nucleation coupled model for degradation of CNTs
	Effect of CNT geometry and orientation
	Electromechanical forces
	Lorentz force
	Electrostatic force
	The van der Waals force
	Ponderomotive force
	Modelling the reorientation of CNTs
	Computational scheme
	Discretization of the nucleation coupled model for degradation
	Incremental update of the CNT geometry
	Computation of field emission current
	Results and discussions
	Degradation of the CNT thin films
	Current-voltage characteristics
	Field emission current history
	Effects of uniform height, uniform radius and uniform spacing
	Effects of non-uniform radius
	Effects of non-uniform height
	Effects of non-uniform spacing between neighboring CNTs
	Conclusions
