Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon
D. Schwendt*, H. J. Osten, P. Shekhter, M. Eizenberg
Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.
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rare earth elements Physics & Astronomy 100%
permittivity Physics & Astronomy 80%
oxides Physics & Astronomy 72%
augmentation Physics & Astronomy 70%
cubic lattices Physics & Astronomy 67%
silicon Physics & Astronomy 62%
thin films Physics & Astronomy 29%
Schwendt, D., Osten, H. J., Shekhter, P., & Eizenberg, M. (2012). Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. Applied Physics Letters, 100(23), [232905]. https://doi.org/10.1063/1.4727893
Schwendt, D. ; Osten, H. J. ; Shekhter, P. ; Eizenberg, M. / Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. In: Applied Physics Letters. 2012 ; Vol. 100, No. 23.
@article{68b296333fe14ec394318d3668751d5d,
title = "Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon",
abstract = "Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.",
author = "D. Schwendt and Osten, {H. J.} and P. Shekhter and M. Eizenberg",
note = "Funding Information: We would like to thank E. Bugiel for the TEM investigations. The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project OS 112/5-1). This work was also partly supported by a grant from the German-Israel Foundation for Scientific Research and Development.",
Schwendt, D, Osten, HJ, Shekhter, P & Eizenberg, M 2012, 'Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon', Applied Physics Letters, vol. 100, no. 23, 232905. https://doi.org/10.1063/1.4727893
Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. / Schwendt, D.; Osten, H. J.; Shekhter, P.; Eizenberg, M.
In: Applied Physics Letters, Vol. 100, No. 23, 232905, 04.06.2012.
T1 - Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon
AU - Schwendt, D.
AU - Osten, H. J.
AU - Shekhter, P.
AU - Eizenberg, M.
N1 - Funding Information: We would like to thank E. Bugiel for the TEM investigations. The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project OS 112/5-1). This work was also partly supported by a grant from the German-Israel Foundation for Scientific Research and Development.
N2 - Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.
AB - Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.
Schwendt D, Osten HJ, Shekhter P, Eizenberg M. Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. Applied Physics Letters. 2012 Jun 4;100(23). 232905. https://doi.org/10.1063/1.4727893