Structural Effects in Al(111)/S...
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1988 , pp. 465-470
Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α
A. S. Yapsir (a1), C.-H. Choi (a1), S. N. Yang (a1), T.-M. Lu (a1), M. Madden (a2) and B. Tracy (a2)...
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
Intel Corporation, Santa Clara, CA 95051
Single crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.
1 Ignat'ev, A. S., Morekov, V. G., Petrova, A. G., Rybin, A. V., and Manzha, N. M., Sov. Tech. Phys. Lett. 8, 174(1982).
2 Yamada, I., Inokawa, H., and Takagi, T., J. Appl. Phys. 56, 2746(1984); Jpn. J. Appl. Phys. 24, L173(1985).
3 Jin, H.-S., Yapsir, A. S., Lu, T.-M., Gibson, W. M., Yamada, I., and Takagi, T., Appl. Phys. Lett. 50, 1062(1987).
4 Choi, C.-H., Harper, R. A., Yapsir, A. S., and Lu, T.-M., Appl. Phys. Lett. 51, 1993(1988).
5 LeGoues, F. K., Krakow, W., and Ho, P. S., in Layered structures-epitaxy and interfaces, edited by Gibson, J. M. and Dawson, L. R. (Materials Research Society, Pittsburgh, 1985), Vol. 37, p.395; Philos. Mag. A 53, 833(1986).
6 Yamada, I., Palmstrom, C. J., Kennedy, E., Mayer, J. W., Inokawa, H., and Takagi, T., in Layered Structures-Epitaxy and Interfaces, eds. Gibson, J. M. and Dawson, L. R. (Materials Research Society, Pittsburgh, 1985), Vol. 37, p. 402.
7 Mei, S.-N., Lu, T.-M., and Robert, S., IEEE Electron Device Lett. EDL–8, 503(1987).
8 Mei, S.-N., and Lu, T.-M., J. Vac. Sci. Tech. A6, 9(1988).
9 Kern, W. and Puotlineu, D. A., RCA Rev. 31, 187(1970).
10 Zur, A., and McGill, T. C., J. Appl. Phys 55, 378(1984).
11 Yapsir, A. S., Bai, P., Lu, T.-M., Appl. Phys. Lett. (submitted).
12 Szymonski, M., and Poradzisz, A., Appl. Phys. A 28, 175(1982).
13 Muller, K. H., J. Vac. Sci. Tech. A 4, 184(1986).