DOE Patents Patent: Thermal oxidation of single crystal aluminum antimonide and materials having the same
Title: Thermal oxidation of single crystal aluminum antimonide and materials having the same
In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.
Sherohman, John William; Yee, Jick Hong; Coombs, III, Arthur William; Wu, Kuang Jen J.
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Lawrence Livermore National Security, LLC (Livermore, CA)
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L23/291 - {Oxides or nitrides or carbides, e.g. ceramics, glass}
H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L21/02241 - {III-V semiconductor}
AC52-07NA27344
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Sherohman, John William, Yee, Jick Hong, Coombs, III, Arthur William, and Wu, Kuang Jen J. Thermal oxidation of single crystal aluminum antimonide and materials having the same. United States: N. p., 2012. Web.
Sherohman, John William, Yee, Jick Hong, Coombs, III, Arthur William, & Wu, Kuang Jen J. Thermal oxidation of single crystal aluminum antimonide and materials having the same. United States.
Sherohman, John William, Yee, Jick Hong, Coombs, III, Arthur William, and Wu, Kuang Jen J. Tue . "Thermal oxidation of single crystal aluminum antimonide and materials having the same". United States. https://www.osti.gov/servlets/purl/1082133.
title = {Thermal oxidation of single crystal aluminum antimonide and materials having the same},
author = {Sherohman, John William and Yee, Jick Hong and Coombs, III, Arthur William and Wu, Kuang Jen J.},
abstractNote = {In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.},
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