Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness
Akira Hayashi, Masaki Kobayashi, Chengjun Jing, Takao Tsukada, Mitsunori Hozawa
New Industry Creation Hatchery Center (NICHe)
For the single crystal growth of an oxide, the global analysis of heat transfer in the inductively heated Czochralski (CZ) furnace was carried out to investigate the effect of optical properties of crystal on the CZ crystal growth process. Here, the finite volume method (FVM) was used as the radiative transfer model to solve the radiative transfer equation, and consequently the crystal with a relatively thin optical thickness (∼0.01) could be accounted for. As a result, it was found that the melt/crystal interface becomes more convex toward the melt for a small crystal rotational Reynolds number as the optical thickness of the crystal, κs, decreases, although its dependence is slight for κs < 0.1. In addition, the critical Reynolds number, at which the interface inversion occurs, decreases with the optical thickness of the crystal.
https://doi.org/10.1016/j.ijheatmasstransfer.2004.06.036
10.1016/j.ijheatmasstransfer.2004.06.036
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Crystal Earth and Planetary Sciences 100%
Crystalline Material Chemistry 100%
Crystals Physics 100%
Optical Thickness Earth and Planetary Sciences 66%
Single Crystal Growth Chemistry 66%
Oxide Earth and Planetary Sciences 33%
Melt Earth and Planetary Sciences 33%
Growth Process Engineering 33%
Hayashi, A., Kobayashi, M., Jing, C., Tsukada, T., & Hozawa, M. (2004). Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness. International Journal of Heat and Mass Transfer, 47(25), 5501-5509. https://doi.org/10.1016/j.ijheatmasstransfer.2004.06.036
Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness. / Hayashi, Akira; Kobayashi, Masaki; Jing, Chengjun et al.
In: International Journal of Heat and Mass Transfer, Vol. 47, No. 25, 12.2004, p. 5501-5509.
Hayashi, A, Kobayashi, M, Jing, C, Tsukada, T & Hozawa, M 2004, 'Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness', International Journal of Heat and Mass Transfer, vol. 47, no. 25, pp. 5501-5509. https://doi.org/10.1016/j.ijheatmasstransfer.2004.06.036
Hayashi A, Kobayashi M, Jing C, Tsukada T, Hozawa M. Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness. International Journal of Heat and Mass Transfer. 2004 Dec;47(25):5501-5509. doi: 10.1016/j.ijheatmasstransfer.2004.06.036
Hayashi, Akira ; Kobayashi, Masaki ; Jing, Chengjun et al. / Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness. In: International Journal of Heat and Mass Transfer. 2004 ; Vol. 47, No. 25. pp. 5501-5509.
@article{bc5397b306e14e4797d5bf2a7e77b82f,
title = "Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness",
abstract = "For the single crystal growth of an oxide, the global analysis of heat transfer in the inductively heated Czochralski (CZ) furnace was carried out to investigate the effect of optical properties of crystal on the CZ crystal growth process. Here, the finite volume method (FVM) was used as the radiative transfer model to solve the radiative transfer equation, and consequently the crystal with a relatively thin optical thickness (∼0.01) could be accounted for. As a result, it was found that the melt/crystal interface becomes more convex toward the melt for a small crystal rotational Reynolds number as the optical thickness of the crystal, κs, decreases, although its dependence is slight for κs < 0.1. In addition, the critical Reynolds number, at which the interface inversion occurs, decreases with the optical thickness of the crystal.",
author = "Akira Hayashi and Masaki Kobayashi and Chengjun Jing and Takao Tsukada and Mitsunori Hozawa",
doi = "10.1016/j.ijheatmasstransfer.2004.06.036",
T1 - Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness
AU - Hayashi, Akira
AU - Kobayashi, Masaki
AU - Jing, Chengjun
AU - Tsukada, Takao
AU - Hozawa, Mitsunori
N2 - For the single crystal growth of an oxide, the global analysis of heat transfer in the inductively heated Czochralski (CZ) furnace was carried out to investigate the effect of optical properties of crystal on the CZ crystal growth process. Here, the finite volume method (FVM) was used as the radiative transfer model to solve the radiative transfer equation, and consequently the crystal with a relatively thin optical thickness (∼0.01) could be accounted for. As a result, it was found that the melt/crystal interface becomes more convex toward the melt for a small crystal rotational Reynolds number as the optical thickness of the crystal, κs, decreases, although its dependence is slight for κs < 0.1. In addition, the critical Reynolds number, at which the interface inversion occurs, decreases with the optical thickness of the crystal.
AB - For the single crystal growth of an oxide, the global analysis of heat transfer in the inductively heated Czochralski (CZ) furnace was carried out to investigate the effect of optical properties of crystal on the CZ crystal growth process. Here, the finite volume method (FVM) was used as the radiative transfer model to solve the radiative transfer equation, and consequently the crystal with a relatively thin optical thickness (∼0.01) could be accounted for. As a result, it was found that the melt/crystal interface becomes more convex toward the melt for a small crystal rotational Reynolds number as the optical thickness of the crystal, κs, decreases, although its dependence is slight for κs < 0.1. In addition, the critical Reynolds number, at which the interface inversion occurs, decreases with the optical thickness of the crystal.
U2 - 10.1016/j.ijheatmasstransfer.2004.06.036
DO - 10.1016/j.ijheatmasstransfer.2004.06.036