Justia Patents Nan Tu Inventions, Patents and Patent Applications
Patents by Inventor Nan Tu
Nan Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
IMAGE SENSOR DEVICE WITH IMPROVED QUANTUM EFFICIENCY
Abstract: A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.
Inventors: Chien-Nan TU, Yu-Lung YEH, Hsing-Chih LIN, Chien-Chang HUANG
Image-sensor device and method of manufacturing the same
Abstract: An image-sensor device includes a first semiconductor substrate. The image-sensor device further includes a second semiconductor substrate under the first semiconductor substrate. The first semiconductor substrate has a first dopant concentration less than a second dopant concentration of the second semiconductor substrate. A ratio of a first resistance of the first semiconductor substrate to a second resistance of the second semiconductor substrate is larger than or equal to about 100. The image-sensor device also includes a diffusion layer positioned between the first semiconductor substrate and the second semiconductor substrate. A ratio of a first thickness of the diffusion layer to a second thickness of the first semiconductor substrate ranges from about 0.1 to about 1.
Inventors: Chien-Nan Tu, Yu-Lung Yeh, Ming-Hsien Wu
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.
Inventors: CHIEN-CHANG HUANG, LI-MING SUN, CHIEN NAN TU, YI-PING PAN, YU-LUNG YEH
CMOS IMAGE SENSOR STRUCTURE
Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.
Inventors: Chien-Nan TU, Yu-Lung YEH, Hsing-Chih LIN, Chien-Chang HUANG, Shih-Shiung CHEN
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
Abstract: A semiconductor device includes an epitaxial layer including a first surface and a silicon layer disposed on the first surface and including a second surface opposite to the first surface, wherein the silicon layer includes a plurality of pillars on the second surface, a portion of the plurality of pillars on a predetermined portion of the second surface are in substantially same dimension, each of the plurality of pillars on the predetermined portion of the second surface stands substantially orthogonal to the second surface, the plurality of pillars are configured for absorbing an electromagnetic radiation of a predetermined wavelength projected from the epitaxial layer and generating an electrical energy in response to the absorption of the electromagnetic radiation.
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventors: CHIEN NAN TU, YU-LUNG YEH, MING-HSIEN WU, LI-MING SUN
Apparatus for public access mobility LAN and method of operation thereof
Abstract: Public wireless communications will increasingly extend into wireless LAN (WLAN) environments in order to meet the ubiquitous access, high data rate, and local services demands of future Internet appliances. By relying on IP-level services mechanisms, the Public Access Mobility LAN (PAMLAN) can simultaneously support different air interfaces, franchises for multiple services providers, and a multi-segment LAN environment including handoffs. The PAMLAN supports virtual operator LANs representing different network services providers, authorization and accounting mechanism, support of multiple air interfaces, and local IP mobility. A router associated with each base station realizes this highly distributed IP networking environment, and a QoS-enabled switched Ethernet core supports virtual networks and QoS services.
Assignee: NEC Corporation
Inventors: Stephen B. Weinstein, Jun Li, Junbiao Zhang, Nan Tu
Method for shrinking a dimension of a gate
Abstract: A method for shrinking a dimension of a gate is provided that utilizes a thermal oxidation to form an oxide layer on a semiconductor substrate and a gate. Controlling the thickness of the oxide layer on the gate will control the channel length of a gate. The oxide layer on the gate is stripped by a suitable etching solution and then shrinkage of the dimension of the gate is achieved. That is, an ability of a photolithography is overcome, moreover; shrinking the dimension of the gate to reach an advanced process by the most economical method.
Inventors: Yao-Chia Yeh, Hsiao-Wen Chuang, Chien-Nan Tu, Hsuan-Sheng Tung
Accelerated large data distribution in overlay networks
Abstract: A Method and apparatus for dynamically discovering and utilizing unused resources for practical and efficient creation of optimized network mechanisms for data distribution. Proposed techniques for data distribution, assembly, routing and scheduling in broadband networks can be implemented as content-level server platform architecture enabled by application-level control plane. Such a platform accelerates content transfer, mirroring and replication. It applies coordinated data partitioning and resource discovery and sharing of information replication by multiple network systems. Furthermore, it harvests the unutilized bandwidth in the network by disassembling the large content to be distributed into different components. These components are then routed in spatially and temporally diverse routes through multiple paths and trees and assembled at the destination nodes. The result is accelerated content distribution, added security, scalability and robustness.
Applicant: NEC Laboratories America, Inc.
Inventors: Rauf Izmailov, Samrat Ganguly, Nan Tu, Aikaterini Varsou
Technique for determining carrier-to-noise ratio of selected channels in an access network
Abstract: A technique is disclosed for determining a carrier-to-noise ratio (CNR) value for a selected channel of an access network. A background noise level on the selected channel is measured during a first time interval during which none of the network nodes are transmitting signals on the selected channel. A first signal strength on the selected channel is also measured during a second time interval during which a first network node is transmitting at least one signal on the selected channel. A CNR value for the selected channel may then be calculated using the measured background noise level information and the measured first signal strength information. According to a specific implementation, the calculation of the CNR value for the selected channel is not based upon an Error Vector Magnitude value associated with the signal transmitted from the first network node.
Assignee: Cisco Technology, Inc.
Inventors: Charles Naegeli, Hungsan Chen, Nan Tu, Harihara Mahesh, Chrisanto de Jesus Leano, Nozar Azarakhsh
Applicant: NEC USA, INC.
Gate for preventing dopants from penetrating a gate insulator and method of forming the same
Abstract: A gate for preventing dopants from penetrating a gate insulator comprises a polysilicon layer and an amorphous-silicon layer disposing on the polysilicon layer. The layered gate inhibits dopants from penetrating through a gate oxide layer disposing between the gate and a substrate. A source and a drain are disposed in the substrate beside the amorphous-silicon layer and the polysilicon layer.
Inventors: Chung-Ching Lai, Jui-Ping Li, Tung-Ming Lai, Chien-Nan Tu
Method of eliminating leakage current in shallow trench isolation
Abstract: A method of eliminating leakage current in shallow trench isolation is disclosed. After the trench is formed on the substrate, the liner oxide layer is formed in the furnace by introducing transdichloroethylene (TLC) into the furnace to round the corner of the trench. An electric filed near the rounded trench corner is decreased; thus, the leakage current produced in the corner of the shallow trench isolation is eliminated.
IP-based AAA scheme for wireless LAN virtual operators
Abstract: Mobile users access the Internet and local network services at hot spots such as airports, hotels, coffee shops and vacation resorts. The mobile users' Internet Service Providers (ISPs) are used as the single point of contact for all authentication, accounting, and authorization (AAA) transactions. AAA transactions for such ISPs acting as "virtual operators" are handled according to a system entirely based on IP. Converging both the AAA process and data transmission at the IP layer works across multiple air interfaces and is interoperable with wireless LAN cards from different vendors.
Inventors: Junbiao Zhang, Jun Li, Stephen Weinstein, Nan Tu
Method and apparatus for a router line card with adaptive selectable gain control
Abstract: A system and method are disclosed for calibrating a line card having a gain control circuit and memory device. The gain control circuit is configured to receive an input signal and an adjustment signal and to output an adjusted output signal that is based on the input signal and the adjustment signal. The gain control circuit also is configured to alter the adjustment signal to a nominal adjustment value so that an adjusted amplitude value of the adjusted signal converges with a nominal amplitude value. A first input signal, a first adjustment signal, and a nominal amplitude value are provided to the gain control circuit. A first nominal adjustment value is determined. The first nominal adjustment value is substantially permanently stored within a first address of the memory device with the first address being associated with the first input signal.
Inventors: Joseph C. H. Fung, Mark E. Millet, Charles J. Naegeli, Nan Tu, Guenter Roeck, Yuzon Hao
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