Electrooptic effect of water in electric double layer at interface of GaN electrode
Hironori Kanemaru, Yugo Nosaka, Akira Hirako, Kazuhiro Ohkawa, Takayoshi Kobayashi, Eiji Tokunaga*
Computer, Electrical and Mathematical Science and Engineering
We determined the Pockels constant of water in the electric double layer (EDL) at the GaN electrode interface. For a positive (negative) bias, the difference transmittance showed a blue (red) shift in the interference fringes in the visible. This was caused by a negative (positive) refractive index change both in the EDL of water and in the space charge layer (SCL) of the GaN. The latter was associated with the blue shift in the absorption edge in the UV due to the band population effect in the GaN. The voltage drops took place within the interfacial layer at a ratio of about 3: 1 for the SCL vs EDL at the modulation frequency of f = 20 Hz, estimated from the frequency dependence of the impedance. The Pockels constant of water in the EDL was determined to be r13 = 0:63 × 100 pm/V for the GaN electrodes. This is three times smaller than that at the surface of the indium tin oxide (ITO) electrode.
Optical Review
Band population effect
Electric double layer
Electroabsorption spectroscopy
Liquid-solid interface
Optical nonlinearity
Pockels effect
Space charge layer
Dive into the research topics of 'Electrooptic effect of water in electric double layer at interface of GaN electrode'. Together they form a unique fingerprint.
Electric Double Layer Chemistry 100%
Electrode Earth and Planetary Sciences 80%
Water Earth and Planetary Sciences 80%
Water Type Chemistry 80%
Electrodes Physics 80%
Space Charge Earth and Planetary Sciences 40%
Indium Tin Oxide Chemistry 40%
Electric Potential Earth and Planetary Sciences 20%
Kanemaru, H., Nosaka, Y., Hirako, A., Ohkawa, K., Kobayashi, T., & Tokunaga, E. (2010). Electrooptic effect of water in electric double layer at interface of GaN electrode. Optical Review, 17(3), 352-356. https://doi.org/10.1007/s10043-010-0064-x
Kanemaru, Hironori ; Nosaka, Yugo ; Hirako, Akira et al. / Electrooptic effect of water in electric double layer at interface of GaN electrode. In: Optical Review. 2010 ; Vol. 17, No. 3. pp. 352-356.
@article{c39b8a46ad5541b1aa0bd9cbbf4f83fa,
title = "Electrooptic effect of water in electric double layer at interface of GaN electrode",
abstract = "We determined the Pockels constant of water in the electric double layer (EDL) at the GaN electrode interface. For a positive (negative) bias, the difference transmittance showed a blue (red) shift in the interference fringes in the visible. This was caused by a negative (positive) refractive index change both in the EDL of water and in the space charge layer (SCL) of the GaN. The latter was associated with the blue shift in the absorption edge in the UV due to the band population effect in the GaN. The voltage drops took place within the interfacial layer at a ratio of about 3: 1 for the SCL vs EDL at the modulation frequency of f = 20 Hz, estimated from the frequency dependence of the impedance. The Pockels constant of water in the EDL was determined to be r13 = 0:63 × 100 pm/V for the GaN electrodes. This is three times smaller than that at the surface of the indium tin oxide (ITO) electrode.",
keywords = "Band population effect, Electric double layer, Electroabsorption spectroscopy, GaN, Liquid-solid interface, Optical nonlinearity, Pockels effect, Refractive index, Space charge layer, Water",
author = "Hironori Kanemaru and Yugo Nosaka and Akira Hirako and Kazuhiro Ohkawa and Takayoshi Kobayashi and Eiji Tokunaga",
journal = "Optical Review",
Kanemaru, H, Nosaka, Y, Hirako, A, Ohkawa, K, Kobayashi, T & Tokunaga, E 2010, 'Electrooptic effect of water in electric double layer at interface of GaN electrode', Optical Review, vol. 17, no. 3, pp. 352-356. https://doi.org/10.1007/s10043-010-0064-x
Electrooptic effect of water in electric double layer at interface of GaN electrode. / Kanemaru, Hironori; Nosaka, Yugo; Hirako, Akira et al.
In: Optical Review, Vol. 17, No. 3, 18.06.2010, p. 352-356.
T1 - Electrooptic effect of water in electric double layer at interface of GaN electrode
AU - Kanemaru, Hironori
AU - Nosaka, Yugo
AU - Hirako, Akira
AU - Ohkawa, Kazuhiro
AU - Kobayashi, Takayoshi
AU - Tokunaga, Eiji
N2 - We determined the Pockels constant of water in the electric double layer (EDL) at the GaN electrode interface. For a positive (negative) bias, the difference transmittance showed a blue (red) shift in the interference fringes in the visible. This was caused by a negative (positive) refractive index change both in the EDL of water and in the space charge layer (SCL) of the GaN. The latter was associated with the blue shift in the absorption edge in the UV due to the band population effect in the GaN. The voltage drops took place within the interfacial layer at a ratio of about 3: 1 for the SCL vs EDL at the modulation frequency of f = 20 Hz, estimated from the frequency dependence of the impedance. The Pockels constant of water in the EDL was determined to be r13 = 0:63 × 100 pm/V for the GaN electrodes. This is three times smaller than that at the surface of the indium tin oxide (ITO) electrode.
AB - We determined the Pockels constant of water in the electric double layer (EDL) at the GaN electrode interface. For a positive (negative) bias, the difference transmittance showed a blue (red) shift in the interference fringes in the visible. This was caused by a negative (positive) refractive index change both in the EDL of water and in the space charge layer (SCL) of the GaN. The latter was associated with the blue shift in the absorption edge in the UV due to the band population effect in the GaN. The voltage drops took place within the interfacial layer at a ratio of about 3: 1 for the SCL vs EDL at the modulation frequency of f = 20 Hz, estimated from the frequency dependence of the impedance. The Pockels constant of water in the EDL was determined to be r13 = 0:63 × 100 pm/V for the GaN electrodes. This is three times smaller than that at the surface of the indium tin oxide (ITO) electrode.
KW - Band population effect
KW - Electric double layer
KW - Electroabsorption spectroscopy
KW - GaN
KW - Liquid-solid interface
KW - Optical nonlinearity
KW - Pockels effect
KW - Refractive index
KW - Space charge layer
KW - Water
JO - Optical Review
JF - Optical Review
Kanemaru H, Nosaka Y, Hirako A, Ohkawa K, Kobayashi T, Tokunaga E. Electrooptic effect of water in electric double layer at interface of GaN electrode. Optical Review. 2010 Jun 18;17(3):352-356. doi: 10.1007/s10043-010-0064-x