Stability of the q/3 fractional quantum Hall states
Yang Liu, J. Shabani, M. Shayegan
Magnetotransport measurements in a wide GaAs quantum well in which we can tune the Fermi energy (EF) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall states at ν=10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. The data provide direct evidence that the q/3 states are stable and strong even at such high fillings as long as EF lies in a ground-state (N=0) Landau level of either of the two electric subbands, regardless of whether that level belongs to the symmetric or the antisymmetric subband. Evidently, the node in the out-of-plane direction of the antisymmetric subband does not destabilize the q/3 fractional states. On the other hand, when EF lies in an excited (N>0) Landau level of either subband, the wave function node(s) in the in-plane direction weaken or completely destabilize the q/3 fractional quantum Hall states. Our data also reveal that the strength of the q/3 fractional states near the crossing of two Landau levels belonging to the two subbands depends on the relative spin polarization of the levels; specifically, the states remain stable very near the crossing if the two levels have parallel spins.
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Galvanomagnetic effects Engineering & Materials Science
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Liu, Y., Shabani, J., & Shayegan, M. (2011). Stability of the q/3 fractional quantum Hall states. Physical Review B - Condensed Matter and Materials Physics, 84(19), [195303]. https://doi.org/10.1103/PhysRevB.84.195303
Liu, Yang ; Shabani, J. ; Shayegan, M. / Stability of the q/3 fractional quantum Hall states. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 84, No. 19.
@article{bf94ffd0a2734ea9b2f35a6064b5b086,
title = "Stability of the q/3 fractional quantum Hall states",
abstract = "Magnetotransport measurements in a wide GaAs quantum well in which we can tune the Fermi energy (EF) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall states at ν=10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. The data provide direct evidence that the q/3 states are stable and strong even at such high fillings as long as EF lies in a ground-state (N=0) Landau level of either of the two electric subbands, regardless of whether that level belongs to the symmetric or the antisymmetric subband. Evidently, the node in the out-of-plane direction of the antisymmetric subband does not destabilize the q/3 fractional states. On the other hand, when EF lies in an excited (N>0) Landau level of either subband, the wave function node(s) in the in-plane direction weaken or completely destabilize the q/3 fractional quantum Hall states. Our data also reveal that the strength of the q/3 fractional states near the crossing of two Landau levels belonging to the two subbands depends on the relative spin polarization of the levels; specifically, the states remain stable very near the crossing if the two levels have parallel spins.",
author = "Yang Liu and J. Shabani and M. Shayegan",
Liu, Y, Shabani, J & Shayegan, M 2011, 'Stability of the q/3 fractional quantum Hall states', Physical Review B - Condensed Matter and Materials Physics, vol. 84, no. 19, 195303. https://doi.org/10.1103/PhysRevB.84.195303
Stability of the q/3 fractional quantum Hall states. / Liu, Yang; Shabani, J.; Shayegan, M.
T1 - Stability of the q/3 fractional quantum Hall states
AU - Liu, Yang
AU - Shabani, J.
AU - Shayegan, M.
N2 - Magnetotransport measurements in a wide GaAs quantum well in which we can tune the Fermi energy (EF) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall states at ν=10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. The data provide direct evidence that the q/3 states are stable and strong even at such high fillings as long as EF lies in a ground-state (N=0) Landau level of either of the two electric subbands, regardless of whether that level belongs to the symmetric or the antisymmetric subband. Evidently, the node in the out-of-plane direction of the antisymmetric subband does not destabilize the q/3 fractional states. On the other hand, when EF lies in an excited (N>0) Landau level of either subband, the wave function node(s) in the in-plane direction weaken or completely destabilize the q/3 fractional quantum Hall states. Our data also reveal that the strength of the q/3 fractional states near the crossing of two Landau levels belonging to the two subbands depends on the relative spin polarization of the levels; specifically, the states remain stable very near the crossing if the two levels have parallel spins.
AB - Magnetotransport measurements in a wide GaAs quantum well in which we can tune the Fermi energy (EF) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall states at ν=10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. The data provide direct evidence that the q/3 states are stable and strong even at such high fillings as long as EF lies in a ground-state (N=0) Landau level of either of the two electric subbands, regardless of whether that level belongs to the symmetric or the antisymmetric subband. Evidently, the node in the out-of-plane direction of the antisymmetric subband does not destabilize the q/3 fractional states. On the other hand, when EF lies in an excited (N>0) Landau level of either subband, the wave function node(s) in the in-plane direction weaken or completely destabilize the q/3 fractional quantum Hall states. Our data also reveal that the strength of the q/3 fractional states near the crossing of two Landau levels belonging to the two subbands depends on the relative spin polarization of the levels; specifically, the states remain stable very near the crossing if the two levels have parallel spins.
Liu Y, Shabani J, Shayegan M. Stability of the q/3 fractional quantum Hall states. Physical Review B - Condensed Matter and Materials Physics. 2011 Nov 3;84(19). 195303. https://doi.org/10.1103/PhysRevB.84.195303