Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes
Tzer En Nee, Jen Cheng Wang, Hui Tang Shen, Ya Fen Wu, Yu Tai Shih, Chien Lin Lu
The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
https://doi.org/10.1143/JJAP.46.2413
10.1143/JJAP.46.2413
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Excitons Engineering & Materials Science
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light emitting diodes Physics & Astronomy
quantum wells Physics & Astronomy
Quantum efficiency Engineering & Materials Science
excitons Physics & Astronomy
Nee, T. E., Wang, J. C., Shen, H. T., Wu, Y. F., Shih, Y. T., & Lu, C. L. (2007). Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(4 B), 2413-2417. https://doi.org/10.1143/JJAP.46.2413
Nee, Tzer En ; Wang, Jen Cheng ; Shen, Hui Tang ; Wu, Ya Fen ; Shih, Yu Tai ; Lu, Chien Lin. / Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 4 B. pp. 2413-2417.
@article{6701760113f147b58b8dee0250e67484,
title = "Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes",
abstract = "The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.",
author = "Nee, {Tzer En} and Wang, {Jen Cheng} and Shen, {Hui Tang} and Wu, {Ya Fen} and Shih, {Yu Tai} and Lu, {Chien Lin}",
doi = "10.1143/JJAP.46.2413",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
publisher = "Japan Society of Applied Physics",
number = "4 B",
Nee, TE, Wang, JC, Shen, HT, Wu, YF, Shih, YT & Lu, CL 2007, 'Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 46, no. 4 B, pp. 2413-2417. https://doi.org/10.1143/JJAP.46.2413
Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes. / Nee, Tzer En; Wang, Jen Cheng; Shen, Hui Tang; Wu, Ya Fen; Shih, Yu Tai; Lu, Chien Lin.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2413-2417.
T1 - Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes
AU - Nee, Tzer En
AU - Wang, Jen Cheng
AU - Shen, Hui Tang
AU - Wu, Ya Fen
AU - Shih, Yu Tai
AU - Lu, Chien Lin
N2 - The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.
AB - The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.
U2 - 10.1143/JJAP.46.2413
DO - 10.1143/JJAP.46.2413
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 B
Nee TE, Wang JC, Shen HT, Wu YF, Shih YT, Lu CL. Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 Apr 24;46(4 B):2413-2417. https://doi.org/10.1143/JJAP.46.2413